SEMI 3D9 : 2014
Superseded
Superseded
A superseded Standard is one, which is fully replaced by another Standard, which is a new edition of the same Standard.
View Superseded by
GUIDE FOR DESCRIBING MATERIALS PROPERTIES FOR A 300 MM 3DS-IC WAFER STACK
Superseded date
05-10-2020
Superseded by
Published date
06-10-2014
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Pertains to address the needs of the 3D Stacked IC (3DS-IC) industry by providing the tools needed to procure wafer stacks to be used in a 3DS-IC process.
| DevelopmentNote |
Not available for sale from ILI, customer to contact SEMI. (09/2014)
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| DocumentType |
Standard
|
| PublisherName |
Semiconductor Equipment & Materials Institute
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| Status |
Superseded
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| SupersededBy |
| SEMI MF81 : 2005(R2016) | TEST METHOD FOR MEASURING RADIAL RESISTIVITY VARIATION ON SILICON WAFERS |
| SEMI MF1391 : 2007(R2012) | TEST METHOD FOR INTERSTITIAL OXYGEN CONTENT OF SILICON BY INFRARED ABSORPTION WITH SHORT BASELINE |
| SEMI M59 : 2014 | TERMINOLOGY FOR SILICON TECHNOLOGY |
| SEMI M45 : 2010(R2017) | SPECIFICATION FOR 300 MM WAFER SHIPPING SYSTEM |
| SEMI MF1530 : 2007(R2018) | TEST METHOD FOR MEASURING FLATNESS, THICKNESS, AND TOTAL THICKNESS VARIATION ON SILICON WAFERS BY AUTOMATED NON-CONTACT SCANNING |
| SEMI 3D4 : 2015 | GUIDE FOR METROLOGY FOR MEASURING THICKNESS, TOTAL THICKNESS VARIATION (TTV), BOW, WARP/SORI, AND FLATNESS OF BONDED WAFER STACKS |
| SEMI MF951 : 2005(R2016) | TEST METHOD FOR DETERMINATION OF RADIAL INTERSTITIAL OXYGEN VARIATION IN SILICON WAFERS |
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