SEMI M28 : 1997

NOTE: Entire document revised in 1997. Developmental wafers covered by specification are intended for use in research on and development of process and metrology equipment and fabrication processes required to manufacture high-density integrated circuits on 300 mm diameter single crystal silicon wafers. Also may be used to establish the metrology and techniques necessary to support a dimensional specification for 300 mm diameter circuit-quality (prime) wafers. Covers dimensional and crystallographic orientation requirements for 300 mm diameter polished single crystal silicon wafers that fill a short term necessity for developmental wafers; it is intended to withdraw this document in favour of a dimensional specification and technology specific guidelines for circuit-quality wafers in 1998.