SEMI M33 : 1998
Withdrawn
A Withdrawn Standard is one, which is removed from sale, and its unique number can no longer be used. The Standard can be withdrawn and not replaced, or it can be withdrawn and replaced by a Standard with a different number.
TEST METHOD FOR THE DETERMINATION OF RESIDUAL SURFACE CONTAMINATION ON SILICON WAFERS BY MEANS OF TOTAL REFLECTION X-RAY FLUORESCENCE SPECTROSCOPY (TXRF)
01-11-2007
12-01-2013
Describes the analytical procedure to determine the trace level of contaminating elements of an atomic number higher than 15 on polished or epitaxial silicon wafer surfaces in native or thermally grown or tetraethylorthosilicate (TEOS) oxide or in residues of microdroplets of process chemicals or media as analyzed with TXRF on silicon wafer surfaces as described in Sections 15.1 and 15.2. This document specifies a VPD-TXRF (Vapor Phase Decomposition Total Reflection X-Ray Fluorescence Spectroscopy) method to analyze the elemental composition and areal density of impurities, that include cations and anions with atomic numbers between 16 (S) and 92 (U) independent of their chemical state, with the exception of the X-ray source material, on polished or epitaxial silicon wafer surfaces in native or thermally grown oxide or in residues of microdroplets of process chemicals or media as analyzed with TXRF on silicon wafer surfaces.
Access your standards online with a subscription
Features
-
Simple online access to standards, technical information and regulations.
-
Critical updates of standards and customisable alerts and notifications.
-
Multi-user online standards collection: secure, flexible and cost effective.