SEMI M20 : 2015
Superseded
Superseded
A superseded Standard is one, which is fully replaced by another Standard, which is a new edition of the same Standard.
View Superseded by
superseded
A superseded Standard is one, which is fully replaced by another Standard, which is a new edition of the same Standard.
PRACTICE FOR ESTABLISHING A WAFER COORDINATE SYSTEM
Superseded date
07-06-2021
Published date
12-01-2013
Specifies a method for referencing any other coordinate system, such as a site, pattern, or mapping array, to the physical geometry of the wafer surface.
| DevelopmentNote |
Not available for sale from ILI, customer to contact SEMI. (05/2001)
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| DocumentType |
Standard
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| PublisherName |
Semiconductor Equipment & Materials Institute
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| Status |
Superseded
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| SupersededBy |
| SEMI HB7 : 2015 | TEST METHOD FOR MEASUREMENT OF WAVINESS OF CRYSTALLINE SAPPHIRE WAFERS BY USING OPTICAL PROBES |
| SEMI 3D17 : 2017 | SPECIFICATION FOR REFERENCE MATERIAL FOR BONDED WAFER STACK VOID METROLOGY |
| SEMI E91 : 2017 | SPECIFICATION FOR PROBER SPECIFIC EQUIPMENT MODEL (PSEM) |
| SEMI M21 : 2018 | GUIDE FOR ASSIGNING ADDRESSES TO RECTANGULAR ELEMENTS IN A CARTESIAN ARRAY |
| SEMI M53 : 2018 | PRACTICE FOR CALIBRATING SCANNING SURFACE INSPECTION SYSTEMS USING CERTIFIED DEPOSITIONS OF MONODISPERE REFERENCE SPHERES ON UNPATTERNED SEMICONDUCTOR WAFER SURFACES |
| SEMI M77 : 2015 | TEST METHOD FOR DETERMINING WAFER NEAR-EDGE GEOMETRY USING ROLL-OFF AMOUNT, ROA |
| SEMI M68 : MAR 2015 | TEST METHOD FOR DETERMINING WAFER NEAR-EDGE GEOMETRY FROM A MEASURED HEIGHT DATA ARRAY USING A CURVATURE METRIC, ZDD |
| SEMI M70 : 2015 | TEST METHOD FOR DETERMINING WAFER-NEAR-EDGE GEOMETRY USING PARTIAL WAFER SITE FLATNESS |
| SEMI M67 : 2015 | TEST METHOD FOR DETERMINING WAFER NEAR-EDGE GEOMETRY FROM A MEASURED THICKNESS DATA ARRAY USING THE ESFQR, ESFQD, AND ESBIR METRICS |
| SEMI M33 : 1998 | TEST METHOD FOR THE DETERMINATION OF RESIDUAL SURFACE CONTAMINATION ON SILICON WAFERS BY MEANS OF TOTAL REFLECTION X-RAY FLUORESCENCE SPECTROSCOPY (TXRF) |
| SEMI ME1392 : 2016 | GUIDE FOR ANGLE RESOLVED OPTICAL SCATTER MEASUREMENTS ON SPECULAR OR DIFFUSE SURFACES |
| ASTM F 2166 : 2002 | Standard Practices for Monitoring Non-Contact Dielectric Characterization Systems Through Use of Special Reference Wafers (Withdrawn 2003) |
| SEMI M1 : 2017 | SPECIFICATION FOR POLISHED SINGLE CRYSTAL SILICON WAFERS |
| SEMI M72 : 2008 | TEST METHOD FOR DETERMINING WAFER FLATNESS USING THE MOVING AVERAGE QUALIFICATION METRIC BASED ON SCANNING LITHOGRAPHY |
| SEMI M76 : 2010 | SPECIFICATION FOR DEVELOPMENTAL 450 MM DIAMETER POLISHED SINGLE CRYSTAL SILICON WAFERS |
| SEMI MF2074 : 2012 (R2018) | GUIDE FOR MEASURING DIAMETER OF SILICON AND OTHER SEMICONDUCTOR WAFERS |
| SEMI HB6 : 2016 | TEST METHOD FOR MEASUREMENT OF THICKNESS AND SHAPE OF CRYSTALLINE SAPPHIRE WAFERS BY USING OPTICAL PROBES |
| SEMI M59 : 2014 | TERMINOLOGY FOR SILICON TECHNOLOGY |
| SEMI E130 : 2017 | SPECIFICATION FOR PROBER SPECIFIC EQUIPMENT MODEL FOR 300 MM ENVIRONMENT (PSEM300) |
| ASTM F 2074 : 2000 | Standard Guide for Measuring Diameter of Silicon and Other Semiconductor Wafers (Withdrawn 2003) |
| SEMI M48 : 2001 | GUIDE FOR EVALUATING CHEMICAL-MECHANICAL POLISHING PROCESSES OF FILMS ON UNPATTERNED SILICON SUBSTRATES |
| SEMI M71 : 2012 | SPECIFICATION FOR SILICON-ON-INSULATOR (SOI) WAFERS FOR CMOS LSI |
| SEMI MF1530 : 2007(R2018) | TEST METHOD FOR MEASURING FLATNESS, THICKNESS, AND TOTAL THICKNESS VARIATION ON SILICON WAFERS BY AUTOMATED NON-CONTACT SCANNING |
| SEMI M69 : 2007 | PRACTICE FOR DETERMINING WAFER NEAR-EDGE GEOMETRY USING ROLL-OFF AMOUNT, ROA |
| SEMI M61 : 2007(R 2019) | SPECIFICATION FOR SILICON EPITAXIAL WAFERS WITH BURIED LAYERS |
| SEMI E30.1 : 2017 | SPECIFICATION FOR INSPECTION AND REVIEW SPECIFIC EQUIPMENT MODEL (ISEM) |
| SEMI M40 : 2014 | GUIDE FOR MEASUREMENT OF ROUGHNESS OF PLANAR SURFACES ON POLISHED WAFERS |
| SEMI M74 : 2008(R2018) | SPECIFICATION FOR 450 MM DIAMETER MECHANICAL HANDLING POLISHED WAFERS |
| SEMI M73 : 2013 | TEST METHODS FOR EXTRACTING RELEVANT CHARACTERISTICS FROM MEASURED WAFER EDGE PROFILES |
| SEMI MS1 : 2007(R2018) | GUIDE TO SPECIFYING WAFER-WAFER BONDING ALIGNMENT TARGETS |
| SEMI E30.5 : 2002(R2017) | SPECIFICATION FOR METROLOGY SPECIFIC EQUIPMENT MODEL (MSEM) |
| SEMI MF1390 : 2018 | TEST METHOD FOR MEASURING BOW AND WARP ON SILICON WAFERS BY AUTOMATED NONCONTACT SCANNING |
| SEMI MF1618 : 2010(R2015) | PRACTICE FOR DETERMINATION OF UNIFORMITY OF THIN FILMS ON SILICON WAFERS |
| SEMI HB5 : 2015 | TEST METHOD FOR MEASUREMENT OF SAW MARKS ON CRYSTALLINE SAPPHIRE WAFERS BY USING OPTICAL PROBES |
| SEMI E141 : 2005 | GUIDE FOR SPECIFICATION OF ELLIPSOMETER EQUIPMENT FOR USE IN INTEGRATED METROLOGY |
| SEMI HB1 : 2016 | SPECIFICATION FOR SAPPHIRE WAFERS INTENDED FOR USE FOR MANUFACTURING HIGH BRIGHTNESS-LIGHT EMITTING DIODE DEVICES |
| SEMI M78 : 2010 | GUIDE FOR DETERMINING NANOTOPOGRAPHY OF UNPATTERNED SILICON WAFERS FOR THE 130 NM TO 22 NM GENERATIONS IN HIGH VOLUME MANUFACTURING |
| SEMI T13 : 2004(R2010) | SPECIFICATION FOR DEVICE TRACKING: CONCEPTS, BEHAVIOR AND SERVICES |
| SEMI E127 : 2008 | SPECIFICATION FOR INTEGRATED MEASUREMENT MODULE COMMUNICATIONS: CONCEPTS, BEHAVIOR, AND SERVICES (IMMC) |
| SEMI 3D7 : 2013(R2019) | GUIDE FOR ALIGNMENT MARK FOR 3DS-IC PROCESS |
| SEMI MF2166 : 2010 | PRACTICES FOR MONITORING NON-CONTACT DIELECTRIC CHARACTERIZATION SYSTEMS THROUGH USE OF SPECIAL REFERENCE WAFERS |
| SEMI M59 : 2014 | TERMINOLOGY FOR SILICON TECHNOLOGY |
| SEMI M17 : 2010(R2015) | GUIDE FOR A UNIVERSAL WAFER GRID |
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