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SEMI M42 : 2016

SEMI M42 : 2016

Current

Current

The latest, up-to-date edition.

SPECIFICATION FOR COMPOUND SEMICONDUCTOR EPITAXIAL WAFERS

Published date

12-01-2013

Publisher

Semiconductor Equipment & Materials Institute

Contains the requirements for epitaxial layers of the generic composition A[a]B[b]C[c]...N[n] grown on monocrystalline wafers of GaAs or InP (other substrates may be considered where appropriate documents exist to describe the specification of the substrate).

DevelopmentNote
Not available for sale from ILI, customer to contact SEMI. (05/2001)
DocumentType
Standard
PublisherName
Semiconductor Equipment & Materials Institute
Status
Current

SEMI MF673 : 2017 TEST METHOD FOR MEASURING RESISTIVITY OF SEMICONDUCTOR WAFERS OR SHEET RESISTANCE OF SEMICONDUCTOR FILMS WITH A NONCONTACT EDDY-CURRENT GAUGE

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