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SEMI MF673 : 2017

SEMI MF673 : 2017

Superseded

Superseded

A superseded Standard is one, which is fully replaced by another Standard, which is a new edition of the same Standard.

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superseded

A superseded Standard is one, which is fully replaced by another Standard, which is a new edition of the same Standard.

TEST METHOD FOR MEASURING RESISTIVITY OF SEMICONDUCTOR WAFERS OR SHEET RESISTANCE OF SEMICONDUCTOR FILMS WITH A NONCONTACT EDDY-CURRENT GAUGE

Superseded date

05-07-2022

Published date

12-01-2013

Publisher

Semiconductor Equipment & Materials Institute

Contains the nondestructive measurement of bulk resistivity of silicon and certain gallium-arsenide wafers and of the sheet resistance of thin films of silicon or gallium-arsenide fabricated on a limited range of substrates at the wafer center point using a noncontact eddy-current gauge.

DevelopmentNote
Not available for sale from ILI, customer to contact SEMI. (02/2005)
DocumentType
Standard
PublisherName
Semiconductor Equipment & Materials Institute
Status
Superseded
SupersededBy

SEMI PV1 : 2011(R2018) TEST METHOD FOR MEASURING TRACE ELEMENTS IN SILICON FEEDSTOCK FOR SILICON SOLAR CELLS BY HIGH-MASS RESOLUTION GLOW DISCHARGE MASS SPECTROMETRY
SEMI M49 : 2016 GUIDE FOR SPECIFYING GEOMETRY MEASUREMENT SYSTEMS FOR SILICON WAFERS FOR THE 130 NM TO 16 NM TECHNOLOGY GENERATIONS
SEMI M42 : 2016 SPECIFICATION FOR COMPOUND SEMICONDUCTOR EPITAXIAL WAFERS
SEMI MF1527 : 2007 GUIDE FOR APPLICATION OF CERTIFIED REFERENCE MATERIALS AND REFERENCE WAFERS FOR CALIBRATION AND CONTROL OF INSTRUMENTS FOR MEASURING RESISTIVITY OF SILICON
SEMI M76 : 2010 SPECIFICATION FOR DEVELOPMENTAL 450 MM DIAMETER POLISHED SINGLE CRYSTAL SILICON WAFERS
SEMI M1 : 2017 SPECIFICATION FOR POLISHED SINGLE CRYSTAL SILICON WAFERS
SEMI M6 : 2008 SPECIFICATION FOR SILICON WAFERS FOR USE AS PHOTOVOLTAIC SOLAR CELLS
SEMI PV28 : 2016 TEST METHOD FOR MEASURING RESISTIVITY OR SHEET RESISTANCE WITH A SINGLE-SIDED NONCONTACT EDDY-CURRENT GAUGE
SEMI M4 : NOV 2003 SPECIFICATIONS FOR SOS EPITAXIAL WAFERS
SEMI MF391 : 2010E TEST METHODS FOR MINORITY CARRIER DIFFUSION LENGTH IN EXTRINSIC SEMICONDUCTORS BY MEASUREMENT OF STEADY-STATE SURFACE PHOTOVOLTAGE
SEMI M79 : 2018 SPECIFICATION FOR ROUND 100 MM POLISHED MONOCRYSTALLINE GERMANIUM WAFERS FOR SOLAR CELL APPLICATIONS
SEMI MF1535 : 2015 TEST METHOD FOR CARRIER RECOMBINATION LIFETIME IN ELECTRONIC-GRADE SILICON WAFERS BY NONCONTACT MEASUREMENT OF PHOTOCONDUCTIVITY DECAY BY MICROWAVE REFLECTANCE
SEMI M55 : 2017 SPECIFICATION FOR POLISHED MONOCRYSTALLINE SILICON CARBIDE WAFERS
SEMI PV9 : 2011(R2015) TEST METHOD FOR EXCESS CHARGE CARRIER DECAY IN PV SILICON MATERIALS BY NON-CONTACT MEASUREMENTS OF MICROWAVE REFLECTANCE AFTER A SHORT ILLUMINATION PULSE
SEMI PV49 : 2013(R2018) TEST METHOD FOR THE MEASUREMENT OF ELEMENTAL IMPURITY CONCENTRATIONS IN SILICON FEEDSTOCK FOR SILICON SOLAR CELLS BY BULK DIGESTION, INDUCTIVELY COUPLED-PLASMA MASS SPECTROMETRY
SEMI MF1618 : 2010(R2015) PRACTICE FOR DETERMINATION OF UNIFORMITY OF THIN FILMS ON SILICON WAFERS
SEMI PV22 : 2017 SPECIFICATION FOR SILICON WAFERS FOR USE IN PHOTOVOLTAIC SOLAR CELLS
SEMI M86 : 2015 SPECIFICATION FOR POLISHED MONOCRYSTALLINE C-PLANE GALLIUM NITRIDE WAFERS

SEMI MF81 : 2005(R2016) TEST METHOD FOR MEASURING RADIAL RESISTIVITY VARIATION ON SILICON WAFERS
SEMI MF84:2012 TEST METHOD FOR MEASURING RESISTIVITY OF SILICON WAFERS WITH AN IN-LINE FOUR-POINT PROBE
SEMI MF533 : 2010(R2016) TEST METHODS FOR THICKNESS AND THICKNESS VARIATION OF SILICON WAFERS
SEMI M59 : 2014 TERMINOLOGY FOR SILICON TECHNOLOGY
SEMI MF1527 : 2007 GUIDE FOR APPLICATION OF CERTIFIED REFERENCE MATERIALS AND REFERENCE WAFERS FOR CALIBRATION AND CONTROL OF INSTRUMENTS FOR MEASURING RESISTIVITY OF SILICON
SEMI MF374 :2012(R2018) TEST METHOD FOR SHEET RESISTANCE OF SILICON EPITAXIAL, DIFFUSED, POLYSILICON, AND ION-IMPLANTED LAYERS USING AN IN-LINE FOUR-POINT PROBE WITH THE SINGLE-CONFIGURATION PROCEDURE

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