SEMI MF110 : 2007(R2018)
Superseded
Superseded
A superseded Standard is one, which is fully replaced by another Standard, which is a new edition of the same Standard.
View Superseded by
TEST METHOD FOR THICKNESS OF EPITAXIAL OR DIFFUSED LAYERS IN SILICON BY THE ANGLE LAPPING AND STAINING TECHNIQUE
Superseded date
16-12-2023
Superseded by
Published date
04-08-2018
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Applicable for process control, research and development, and materials acceptance purposes.
| DevelopmentNote |
Not available for sale from ILI, customer to contact SEMI. (11/2003)
|
| DocumentType |
Standard
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| PublisherName |
Semiconductor Equipment & Materials Institute
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| Status |
Superseded
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| SupersededBy |
| SEMI MF525 : 2012 | TEST METHOD FOR MEASURING RESISTIVITY OF SILICON WAFERS USING A SPREADING RESISTANCE PROBE |
| SEMI M41 : 2015 | SPECIFICATION OF SILICON-ON-INSULATOR (SOI) FOR POWER DEVICE/ICS |
| SEMI M4 : NOV 2003 | SPECIFICATIONS FOR SOS EPITAXIAL WAFERS |
| BS ISO 14237:2010 | Surface chemical analysis. Secondary-ion mass spectrometry. Determination of boron atomic concentration in silicon using uniformly doped materials |
| SEMI MF391 : 2010E | TEST METHODS FOR MINORITY CARRIER DIFFUSION LENGTH IN EXTRINSIC SEMICONDUCTORS BY MEASUREMENT OF STEADY-STATE SURFACE PHOTOVOLTAGE |
| SEMI M62 : 2017 | SPECIFICATIONS FOR SILICON EPITAXIAL WAFERS |
| SEMI M2 : 2003 | SPECIFICATION FOR SILICON EPITAXIAL WAFERS FOR DISCRETE DEVICE APPLICATIONS |
| ISO 14237:2010 | Surface chemical analysis Secondary-ion mass spectrometry Determination of boron atomic concentration in silicon using uniformly doped materials |
| SEMI M11 : 2004 | SPECIFICATIONS FOR SILICON EPITAXIAL WAFERS FOR INTEGRATED CIRCUIT (IC) APPLICATIONS |
| SEMI MF525:2012(R2018) | Test Method for Measuring Resistivity of Silicon Wafers Using a Spreading Resistance Probe |
| SEMI M59 : 2014 | TERMINOLOGY FOR SILICON TECHNOLOGY |
| SEMI MF42 : 2016 | TEST METHOD FOR CONDUCTIVITY TYPE OF EXTRINSIC SEMICONDUCTING MATERIALS |
| SEMI MF95 : 2007(R2018) | TEST METHOD FOR THICKNESS OF LIGHTLY DOPED SILICON EPITAXIAL LAYERS ON HEAVILY DOPED SILICON SUBSTRATES USING AN INFRARED DISPERSIVE SPECTROPHOTOMETER |
| SEMI C28 : 2011 | SPECIFICATIONS FOR HYDROFLUORIC ACID |
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