SEMI MF1153 : 2010(R2015)
Current
Current
The latest, up-to-date edition.
TEST METHOD FOR CHARACTERIZATION OF METAL-OXIDE SILICON (MOS) STRUCTURES BY CAPACITANCE-VOLTAGE MEASUREMENTS
Published date
12-01-2013
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Includes measurement of metal-oxide-silicon (MOS) structures for flatband capacitance, flatband voltage, average carrier density within a depletion length of the semiconductor-oxide interface, displacement of flatband voltage after application of voltage stress at elevated temperatures, mobile ionic charge contamination, and total fixed charge density.
| DevelopmentNote |
Not available for sale from ILI, customer to contact SEMI. (11/2003)
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| DocumentType |
Standard
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| PublisherName |
Semiconductor Equipment & Materials Institute
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| Status |
Current
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