SEMI MF1366 : 2008(R2013)
Superseded
Superseded
A superseded Standard is one, which is fully replaced by another Standard, which is a new edition of the same Standard.
View Superseded by
TEST METHOD FOR MEASURING OXYGEN CONCENTRATION IN HEAVILY DOPED SILICON SUBSTRATES BY SECONDARY ION MASS SPECTROMETRY
Superseded date
16-11-2023
Superseded by
Published date
01-04-2013
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Covers the determination of total oxygen concentration in the bulk of single crystal silicon substrates using secondary ion mass spectrometry (SIMS).
| DevelopmentNote |
Not available for sale from ILI, customer to contact SEMI. (11/2003)
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| DocumentType |
Revision
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| PublisherName |
Semiconductor Equipment & Materials Institute
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| Status |
Superseded
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| SupersededBy |
| SEMI M76 : 2010 | SPECIFICATION FOR DEVELOPMENTAL 450 MM DIAMETER POLISHED SINGLE CRYSTAL SILICON WAFERS |
| SEMI MF951 : 2005(R2016) | TEST METHOD FOR DETERMINATION OF RADIAL INTERSTITIAL OXYGEN VARIATION IN SILICON WAFERS |
| SEMI M1 : 2017 | SPECIFICATION FOR POLISHED SINGLE CRYSTAL SILICON WAFERS |
| SEMI M59 : 2014 | TERMINOLOGY FOR SILICON TECHNOLOGY |
| SEMI MF723 : 2007E(R2012)E | PRACTICE FOR CONVERSION BETWEEN RESISTIVITY AND DOPANT OR CARRIER DENSITY FOR BORON-DOPED, PHOSPHOROUS-DOPED, AND ARSENIC-DOPED SILICON |
| SEMI MF43 : 2016 | TEST METHOD FOR RESISTIVITY OF SEMICONDUCTOR MATERIALS |
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