SEMI M1 : 2017
Superseded
Superseded
A superseded Standard is one, which is fully replaced by another Standard, which is a new edition of the same Standard.
View Superseded by
superseded
A superseded Standard is one, which is fully replaced by another Standard, which is a new edition of the same Standard.
SPECIFICATION FOR POLISHED SINGLE CRYSTAL SILICON WAFERS
Superseded date
08-10-2018
Published date
12-01-2013
Specifies the essential dimensional and certain other common characteristics of silicon wafers, including polished wafers as well as substrates for epitaxial and certain other kinds of silicon wafers.
| DevelopmentNote |
Not available for sale from ILI, customer to contact SEMI. (05/2001)
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| DocumentType |
Standard
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| PublisherName |
Semiconductor Equipment & Materials Institute
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| Status |
Superseded
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| SupersededBy |
| SEMI MF81 : 2005(R2016) | TEST METHOD FOR MEASURING RADIAL RESISTIVITY VARIATION ON SILICON WAFERS |
| SEMI M26 : 2004(R2010) | GUIDE FOR THE RE-USE OF 100, 125, 150, AND 200 MM WAFER SHIPPING BOXES USED TO TRANSPORT WAFERS |
| SEMI MF1535 : 2015 | TEST METHOD FOR CARRIER RECOMBINATION LIFETIME IN ELECTRONIC-GRADE SILICON WAFERS BY NONCONTACT MEASUREMENT OF PHOTOCONDUCTIVITY DECAY BY MICROWAVE REFLECTANCE |
| SEMI MF84:2012 | TEST METHOD FOR MEASURING RESISTIVITY OF SILICON WAFERS WITH AN IN-LINE FOUR-POINT PROBE |
| SEMI MF1726 : 2010(R2015) | PRACTICE FOR ANALYSIS OF CRYSTALLOGRAPHIC PERFECTION OF SILICON WAFERS |
| SEMI M35 : 2014 | GUIDE FOR DEVELOPING SPECIFICATIONS FOR SILICON WAFER SURFACE FEATURES DETECTED BY AUTOMATED INSPECTION |
| SEMI MF533 : 2010(R2016) | TEST METHODS FOR THICKNESS AND THICKNESS VARIATION OF SILICON WAFERS |
| SEMI M49 : 2016 | GUIDE FOR SPECIFYING GEOMETRY MEASUREMENT SYSTEMS FOR SILICON WAFERS FOR THE 130 NM TO 16 NM TECHNOLOGY GENERATIONS |
| SEMI MF1388 : 2007(R2018) | TEST METHOD FOR GENERATION LIFETIME AND GENERATION VELOCITY OF SILICON MATERIAL BY CAPACITANCE-TIME MEASUREMENTS OF METAL-OXIDE-SILICON (MOS) CAPACITORS |
| SEMI MF1048 : 2017 | TEST METHOD FOR MEASURING THE REFLECTIVE TOTAL INTEGRATED SCATTER |
| SEMI MF1391 : 2007(R2012) | TEST METHOD FOR INTERSTITIAL OXYGEN CONTENT OF SILICON BY INFRARED ABSORPTION WITH SHORT BASELINE |
| SEMI MF978 : 2006(R2017) | TEST METHOD FOR CHARACTERIZING SEMICONDUCTOR DEEP LEVELS BY TRANSIENT CAPACITANCE TECHNIQUES |
| SEMI M71 : 2012 | SPECIFICATION FOR SILICON-ON-INSULATOR (SOI) WAFERS FOR CMOS LSI |
| SEMI MF1366 : 2008(R2013) | TEST METHOD FOR MEASURING OXYGEN CONCENTRATION IN HEAVILY DOPED SILICON SUBSTRATES BY SECONDARY ION MASS SPECTROMETRY |
| SEMI MF1188:2007(R2012) | TEST METHOD FOR INTERSTITIAL OXYGEN CONTENT OF SILICON BY INFRARED ABSORPTION WITH SHORT BASELINE |
| SEMI MF1239 : 2005(R2016) | TEST METHOD FOR OXYGEN PRECIPITATION CHARACTERISTICS OF SILICON WAFERS BY MEASUREMENT OF INTERSTITIAL OXYGEN REDUCTION |
| SEMI M59 : 2014 | TERMINOLOGY FOR SILICON TECHNOLOGY |
| SEMI M44 : 2005(R2011) | GUIDE TO CONVERSION FACTORS FOR INTERSTITIAL OXYGEN IN SILICON |
| SEMI M45 : 2010(R2017) | SPECIFICATION FOR 300 MM WAFER SHIPPING SYSTEM |
| SEMI M18 : 2012 | GUIDE FOR DEVELOPING SPECIFICATION FORMS FOR ORDER ENTRY OF SILICON WAFERS |
| SEMI MF28 : 2017 | TEST METHOD FOR MINORITY CARRIER LIFETIME IN BULK GERMANIUM AND SILICON BY MEASUREMENT OF PHOTOCONDUCTIVITY DECAY |
| SEMI M58 : 2009(R2014) | TEST METHOD FOR EVALUATING DMA BASED PARTICLE DEPOSITION SYSTEMS AND PROCESSES |
| SEMI MF1617 : 2004(R2016) | TEST METHOD FOR MEASURING SURFACE SODIUM, ALUMINUM, POTASSIUM, AND IRON ON SILICON AND EPI SUBSTRATES BY SECONDARY ION MASS SPECTROMETRY |
| SEMI MF42 : 2016 | TEST METHOD FOR CONDUCTIVITY TYPE OF EXTRINSIC SEMICONDUCTING MATERIALS |
| SEMI MF928 : 2017 | TEST METHOD FOR EDGE CONTOUR OF CIRCULAR SEMICONDUCTOR WAFERS AND RIGID DISK SUBSTRATES |
| SEMI M85 : 2014 | GUIDE FOR THE MEASUREMENT OF TRACE METAL CONTAMINATION ON SILICON WAFER SURFACE BY INDUCTIVELY COUPLED PLASMA MASS SPECTROMETRY |
| SEMI MF1530 : 2007(R2018) | TEST METHOD FOR MEASURING FLATNESS, THICKNESS, AND TOTAL THICKNESS VARIATION ON SILICON WAFERS BY AUTOMATED NON-CONTACT SCANNING |
| SEMI M20 : 2015 | PRACTICE FOR ESTABLISHING A WAFER COORDINATE SYSTEM |
| SEMI MF1451:2007(R2019) | TEST METHOD FOR MEASURING SORI ON SILICON WAFERS BY AUTOMATED NON-CONTACT SCANNING |
| SEMI M78 : 2010 | GUIDE FOR DETERMINING NANOTOPOGRAPHY OF UNPATTERNED SILICON WAFERS FOR THE 130 NM TO 22 NM GENERATIONS IN HIGH VOLUME MANUFACTURING |
| SEMI T3 : 2013 | SPECIFICATION FOR WAFER BOX LABELS |
| SEMI MF951 : 2005(R2016) | TEST METHOD FOR DETERMINATION OF RADIAL INTERSTITIAL OXYGEN VARIATION IN SILICON WAFERS |
| SEMI M41 : 2015 | SPECIFICATION OF SILICON-ON-INSULATOR (SOI) FOR POWER DEVICE/ICS |
| SEMI MF2074 : 2012 (R2018) | GUIDE FOR MEASURING DIAMETER OF SILICON AND OTHER SEMICONDUCTOR WAFERS |
| SEMI M24 : 2007 | SPECIFICATION FOR POLISHED MONOCRYSTALLINE SILICON PREMIUM WAFERS |
| SEMI M57 : 2016 | SPECIFICATION FOR SILICON ANNEALED WAFERS |
| SEMI MF1152 : 2016 | TEST METHOD FOR DIMENSIONS OF NOTCHES ON SILICON WAFERS |
| SEMI M67 : 2015 | TEST METHOD FOR DETERMINING WAFER NEAR-EDGE GEOMETRY FROM A MEASURED THICKNESS DATA ARRAY USING THE ESFQR, ESFQD, AND ESBIR METRICS |
| SEMI PV22 : 2017 | SPECIFICATION FOR SILICON WAFERS FOR USE IN PHOTOVOLTAIC SOLAR CELLS |
| SEMI PV13 : 2014 | TEST METHOD FOR CONTACTLESS EXCESS-CHARGE-CARRIER RECOMBINATION LIFETIME MEASUREMENT IN SILICON WAFERS, INGOTS, AND BRICKS USING AN EDDY-CURRENT SENSOR |
| SEMI MF1528 : 2008(R2018) | TEST METHOD FOR MEASURING BORON CONTAMINATION IN HEAVILY DOPED N-TYPE SILICON SUBSTRATES BY SECONDARY ION MASS SPECTROMETRY |
| SEMI M8 : 2012 | SPECIFICATION FOR POLISHED MONOCRYSTALLINE SILICON TEST WAFERS |
| SEMI MF1982 : 2017 | TEST METHOD FOR ANALYZING ORGANIC CONTAMINANTS ON SILICON WAFER SURFACES BY THERMAL DESORPTION GAS CHROMATOGRAPHY |
| SEMI M40 : 2014 | GUIDE FOR MEASUREMENT OF ROUGHNESS OF PLANAR SURFACES ON POLISHED WAFERS |
| SEMI MF673 : 2017 | TEST METHOD FOR MEASURING RESISTIVITY OF SEMICONDUCTOR WAFERS OR SHEET RESISTANCE OF SEMICONDUCTOR FILMS WITH A NONCONTACT EDDY-CURRENT GAUGE |
| SEMI M77 : 2015 | TEST METHOD FOR DETERMINING WAFER NEAR-EDGE GEOMETRY USING ROLL-OFF AMOUNT, ROA |
| SEMI MF525 : 2012 | TEST METHOD FOR MEASURING RESISTIVITY OF SILICON WAFERS USING A SPREADING RESISTANCE PROBE |
| SEMI MF1619 : 2012(R2018) | TEST METHOD FOR MEASUREMENT OF INTERSTITIAL OXYGEN CONTENT OF SILICON WAFERS BY INFRARED ABSORPTION SPECTROSCOPY WITH P-POLARIZED RADIATION INCIDENT AT THE BREWSTER ANGLE |
| SEMI MF1727 : 2010(R2015) | PRACTICE FOR DETECTION OF OXIDATION INDUCED DEFECTS IN POLISHED SILICON WAFERS |
| SEMI M61 : 2007(R 2019) | SPECIFICATION FOR SILICON EPITAXIAL WAFERS WITH BURIED LAYERS |
| SEMI M70 : 2015 | TEST METHOD FOR DETERMINING WAFER-NEAR-EDGE GEOMETRY USING PARTIAL WAFER SITE FLATNESS |
| SEMI M62 : 2017 | SPECIFICATIONS FOR SILICON EPITAXIAL WAFERS |
| SEMI MF523 : 2007(R2018) | PRACTICE FOR UNAIDED VISUAL INSPECTION OF POLISHED SILICON WAFER SURFACES |
| SEMI T7 : 2016 | SPECIFICATION FOR BACK SURFACE MARKING OF DOUBLE-SIDE POLISHED WAFERS WITH A TWO-DIMENSIONAL MATRIX CODE SYMBOL |
| SEMI M38 : 2012(R2018) | SPECIFICATION FOR POLISHED RECLAIMED SILICON WAFERS |
| SEMI M16 : 2010(R2015) | SPECIFICATION FOR POLYCRYSTALLINE SILICON |
| SEMI MF847 : 2016 | TEST METHOD FOR MEASURING CRYSTALLOGRAPHIC ORIENTATION OF FLATS ON SINGLE CRYSTAL SILICON WAFERS BY X-RAY TECHNIQUES |
| SEMI MF1809 : 2010(R2015) | GUIDE FOR SELECTION AND USE OF ETCHING SOLUTIONS TO DELINEATE STRUCTURAL DEFECTS IN SILICON |
| SEMI MF1049:2008(R2013) | PRACTICE FOR SHALLOW ETCH PIT DETECTION ON SILICON WAFERS |
| SEMI M73 : 2013 | TEST METHODS FOR EXTRACTING RELEVANT CHARACTERISTICS FROM MEASURED WAFER EDGE PROFILES |
| SEMI M68 : MAR 2015 | TEST METHOD FOR DETERMINING WAFER NEAR-EDGE GEOMETRY FROM A MEASURED HEIGHT DATA ARRAY USING A CURVATURE METRIC, ZDD |
| SEMI MF671:2012 | TEST METHOD FOR MEASURING FLAT LENGTH ON WAFERS OF SILICON AND OTHER ELECTRONIC MATERIALS |
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