SEMI MF1388 : 2007(R2018)
Superseded
A superseded Standard is one, which is fully replaced by another Standard, which is a new edition of the same Standard.
View Superseded by
TEST METHOD FOR GENERATION LIFETIME AND GENERATION VELOCITY OF SILICON MATERIAL BY CAPACITANCE-TIME MEASUREMENTS OF METAL-OXIDE-SILICON (MOS) CAPACITORS
16-11-2023
04-08-2018
Covers the measurement of generation lifetime and generation velocity of silicon wafers. Also applies to semiconductor materials other than silicon and to insulators other than silicon dioxide, but the details of capacitor fabrication and the analyses and interpretation of data in such cases are not given in this test method.
| DevelopmentNote |
Not available for sale from ILI, customer to contact SEMI. (11/2003) Also available in CD-ROM. (11/2006)
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| DocumentType |
Revision
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| PublisherName |
Semiconductor Equipment & Materials Institute
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| Status |
Superseded
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| SupersededBy |
| SEMI M1 : 2017 | SPECIFICATION FOR POLISHED SINGLE CRYSTAL SILICON WAFERS |
| SEMI MF1535 : 2015 | TEST METHOD FOR CARRIER RECOMBINATION LIFETIME IN ELECTRONIC-GRADE SILICON WAFERS BY NONCONTACT MEASUREMENT OF PHOTOCONDUCTIVITY DECAY BY MICROWAVE REFLECTANCE |
| SEMI M59 : 2014 | TERMINOLOGY FOR SILICON TECHNOLOGY |
| SEMI MF1153 : 2010(R2015) | TEST METHOD FOR CHARACTERIZATION OF METAL-OXIDE SILICON (MOS) STRUCTURES BY CAPACITANCE-VOLTAGE MEASUREMENTS |
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