SEMI MF1528 : 2008(R2018)
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TEST METHOD FOR MEASURING BORON CONTAMINATION IN HEAVILY DOPED N-TYPE SILICON SUBSTRATES BY SECONDARY ION MASS SPECTROMETRY
Published date
06-11-2018
Covers the determination of total trace boron contamination in the bulk of single crystal, heavily doped n-type silicon substrates using secondary ion mass spectrometry (SIMS).
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