SEMI MF1528 : 2008(R2018)
Current
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The latest, up-to-date edition.
TEST METHOD FOR MEASURING BORON CONTAMINATION IN HEAVILY DOPED N-TYPE SILICON SUBSTRATES BY SECONDARY ION MASS SPECTROMETRY
Published date
06-11-2018
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Covers the determination of total trace boron contamination in the bulk of single crystal, heavily doped n-type silicon substrates using secondary ion mass spectrometry (SIMS).
| DevelopmentNote |
Not available for sale from ILI, customer to contact SEMI. (10/2004)
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| DocumentType |
Standard
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| PublisherName |
Semiconductor Equipment & Materials Institute
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| Status |
Current
|
| SEMI M1 : 2017 | SPECIFICATION FOR POLISHED SINGLE CRYSTAL SILICON WAFERS |
| SEMI PV17 : OCT 2012 | SPECIFICATION FOR VIRGIN SILICON FEEDSTOCK MATERIALS FOR PHOTOVOLTAIC APPLICATIONS |
| SEMI M59 : 2014 | TERMINOLOGY FOR SILICON TECHNOLOGY |
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