SEMI MF391 : 2010E
Current
The latest, up-to-date edition.
TEST METHODS FOR MINORITY CARRIER DIFFUSION LENGTH IN EXTRINSIC SEMICONDUCTORS BY MEASUREMENT OF STEADY-STATE SURFACE PHOTOVOLTAGE
12-01-2013
Specifies three test methods that cover Minority carrier lifetime which is one of the essential characteristics of semiconductor materials. In epitaxial layers and in thin single crystal wafers, the surface recombination corrections necessary to derive the minority carrier lifetime from the photoconductive decay (PCD) method covered by SEMI MF28 and SEMI MF1535 are excessively large.
| DevelopmentNote |
Not available for sale from ILI, customer to contact SEMI. (02/2005) E = This standard was editorially modified in November 2017 to correct editorial errors. (01/2018)
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| DocumentType |
Standard
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| PublisherName |
Semiconductor Equipment & Materials Institute
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| Status |
Current
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| SEMI MF1535 : 2015 | TEST METHOD FOR CARRIER RECOMBINATION LIFETIME IN ELECTRONIC-GRADE SILICON WAFERS BY NONCONTACT MEASUREMENT OF PHOTOCONDUCTIVITY DECAY BY MICROWAVE REFLECTANCE |
| SEMI MF84:2012 | TEST METHOD FOR MEASURING RESISTIVITY OF SILICON WAFERS WITH AN IN-LINE FOUR-POINT PROBE |
| SEMI MF533 : 2010(R2016) | TEST METHODS FOR THICKNESS AND THICKNESS VARIATION OF SILICON WAFERS |
| SEMI M59 : 2014 | TERMINOLOGY FOR SILICON TECHNOLOGY |
| SEMI MF28 : 2017 | TEST METHOD FOR MINORITY CARRIER LIFETIME IN BULK GERMANIUM AND SILICON BY MEASUREMENT OF PHOTOCONDUCTIVITY DECAY |
| SEMI C23 : 2014 | SPECIFICATIONS FOR BUFFERED OXIDE ETCHANTS |
| SEMI C34 : 2013(R 2019) | SPECIFICATION AND GUIDELINE FOR MIXED ACID ETCHANTS |
| SEMI MF95 : 2007(R2018) | TEST METHOD FOR THICKNESS OF LIGHTLY DOPED SILICON EPITAXIAL LAYERS ON HEAVILY DOPED SILICON SUBSTRATES USING AN INFRARED DISPERSIVE SPECTROPHOTOMETER |
| SEMI MF110 : 2007(R2018) | TEST METHOD FOR THICKNESS OF EPITAXIAL OR DIFFUSED LAYERS IN SILICON BY THE ANGLE LAPPING AND STAINING TECHNIQUE |
| SEMI MF673 : 2017 | TEST METHOD FOR MEASURING RESISTIVITY OF SEMICONDUCTOR WAFERS OR SHEET RESISTANCE OF SEMICONDUCTOR FILMS WITH A NONCONTACT EDDY-CURRENT GAUGE |
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