SEMI MF525:2012(R2018)
Superseded
A superseded Standard is one, which is fully replaced by another Standard, which is a new edition of the same Standard.
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Test Method for Measuring Resistivity of Silicon Wafers Using a Spreading Resistance Probe
Hardcopy
17-11-2023
English
01-07-2018
Important note : Users cannot be edited or removed once added to your Multi user PDF.This Test Method covers the measurement of the resistivity of a silicon substrate of known orientation and type, or of a uniform silicon epitaxial layer of known orientation and type that is deposited on a substrate of the same or opposite type.
| DocumentType |
Test Method
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| Pages |
0
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| PublisherName |
Semiconductor Equipment & Materials Institute
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| Status |
Superseded
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| SupersededBy | |
| Supersedes |
| SEMI MF374:2012(R2023) | Test Method for Sheet Resistance of Silicon Epitaxial, Diffused, Polysilicon, and Ion-implanted Layers Using an In-Line Four-Point Probe with the Single-Configuration Procedure |
| SEMI MF84:2012(R2023) | Test Method for Measuring Resistivity of Silicon Wafers With an In-Line Four-Point Probe |
| SEMI MF1392:2007(R2023) | Test Method for Determining Net Carrier Density Profiles in Silicon Wafers by Capacitance-Voltage Measurements with a Mercury Probe |
| SEMI MF110 : 2007(R2018) | TEST METHOD FOR THICKNESS OF EPITAXIAL OR DIFFUSED LAYERS IN SILICON BY THE ANGLE LAPPING AND STAINING TECHNIQUE |
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