SEMI MF525:2012(R2023)
Current
Current
The latest, up-to-date edition.
Test Method for Measuring Resistivity of Silicon Wafers Using a Spreading Resistance Probe
Available format(s)
Hardcopy
Language(s)
English
Published date
01-10-2023
This Test Method covers the measurement of the resistivity of a silicon substrate of known orientation and type, or of a uniform silicon epitaxial layer of known orientation and type that is deposited on a substrate of the same or opposite type.
DocumentType |
Test Method
|
Pages |
0
|
PublisherName |
Semiconductor Equipment & Materials Institute
|
Status |
Current
|
Supersedes |
SEMI MF374:2012(R2023) | Test Method for Sheet Resistance of Silicon Epitaxial, Diffused, Polysilicon, and Ion-implanted Layers Using an In-Line Four-Point Probe with the Single-Configuration Procedure |
SEMI MF84:2012(R2023) | Test Method for Measuring Resistivity of Silicon Wafers With an In-Line Four-Point Probe |
SEMI MF1392:2007(R2023) | Test Method for Determining Net Carrier Density Profiles in Silicon Wafers by Capacitance-Voltage Measurements with a Mercury Probe |
Access your standards online with a subscription
Features
-
Simple online access to standards, technical information and regulations.
-
Critical updates of standards and customisable alerts and notifications.
-
Multi-user online standards collection: secure, flexible and cost effective.