SEMI MF672:2012(R2023)
Current
Current
The latest, up-to-date edition.
Guide for Measuring Resistivity Profiles Perpendicular to the Surface of a Silicon Wafer Using a Spreading Resistance Probe
Available format(s)
Hardcopy
Language(s)
English
Published date
01-10-2023
This Guide covers procedures for measurement of the resistivity profile perpendicular to the surface of a silicon wafer of known orientation and type in any resistivity range for which there exist suitable standards.
DocumentType |
Guide
|
Pages |
0
|
PublisherName |
Semiconductor Equipment & Materials Institute
|
Status |
Current
|
Supersedes |
SEMI MF1392:2007(R2023) | Test Method for Determining Net Carrier Density Profiles in Silicon Wafers by Capacitance-Voltage Measurements with a Mercury Probe |
SEMI MF1527:2012(R2018) | Guide for Application of Certified Reference Materials and Reference Wafers for Calibration and Control of Instruments for Measuring Resistivity of Silicon |
SEMI MF84:2012 | TEST METHOD FOR MEASURING RESISTIVITY OF SILICON WAFERS WITH AN IN-LINE FOUR-POINT PROBE |
SEMI MF1392:2007 | TEST METHOD FOR DETERMINING NET CARRIER DENSITY PROFILES IN SILICON WAFERS BY CAPACITANCE-VOLTAGE MEASUREMENTS WITH A MERCURY PROBE |
SEMI MF374 :2012(R2018) | TEST METHOD FOR SHEET RESISTANCE OF SILICON EPITAXIAL, DIFFUSED, POLYSILICON, AND ION-IMPLANTED LAYERS USING AN IN-LINE FOUR-POINT PROBE WITH THE SINGLE-CONFIGURATION PROCEDURE |
SEMI MF525 : 2012 | TEST METHOD FOR MEASURING RESISTIVITY OF SILICON WAFERS USING A SPREADING RESISTANCE PROBE |
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