SEMI MF95 : 2007(R2018)
Superseded
Superseded
A superseded Standard is one, which is fully replaced by another Standard, which is a new edition of the same Standard.
View Superseded by
TEST METHOD FOR THICKNESS OF LIGHTLY DOPED SILICON EPITAXIAL LAYERS ON HEAVILY DOPED SILICON SUBSTRATES USING AN INFRARED DISPERSIVE SPECTROPHOTOMETER
Available format(s)
Hardcopy
Superseded date
04-11-2023
Superseded by
Language(s)
English
Published date
08-11-2018
Important note : Users cannot be edited or removed once added to your Multi user PDF.Gives a technique for the measurement of the thickness of epitaxial layers of silicon deposited on silicon substrates.
| DevelopmentNote |
Not available for sale from ILI, customer to contact SEMI. (02/2005) Also available in CD-ROM. (10/2007)
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| DocumentType |
Standard
|
| Pages |
0
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| PublisherName |
Semiconductor Equipment & Materials Institute
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| Status |
Superseded
|
| SupersededBy |
| ISO 14237:2010 | Surface chemical analysis Secondary-ion mass spectrometry Determination of boron atomic concentration in silicon using uniformly doped materials |
| SEMI MF525 : 2012 | TEST METHOD FOR MEASURING RESISTIVITY OF SILICON WAFERS USING A SPREADING RESISTANCE PROBE |
| SEMI M4 : NOV 2003 | SPECIFICATIONS FOR SOS EPITAXIAL WAFERS |
| BS ISO 14237:2010 | Surface chemical analysis. Secondary-ion mass spectrometry. Determination of boron atomic concentration in silicon using uniformly doped materials |
| SEMI MF391 : 2010E | TEST METHODS FOR MINORITY CARRIER DIFFUSION LENGTH IN EXTRINSIC SEMICONDUCTORS BY MEASUREMENT OF STEADY-STATE SURFACE PHOTOVOLTAGE |
| SEMI M62 : 2017 | SPECIFICATIONS FOR SILICON EPITAXIAL WAFERS |
| SEMI MF110 : 2007(R2018) | TEST METHOD FOR THICKNESS OF EPITAXIAL OR DIFFUSED LAYERS IN SILICON BY THE ANGLE LAPPING AND STAINING TECHNIQUE |
| SEMI M2 : 2003 | SPECIFICATION FOR SILICON EPITAXIAL WAFERS FOR DISCRETE DEVICE APPLICATIONS |
| SEMI MF1726 : 2010(R2015) | PRACTICE FOR ANALYSIS OF CRYSTALLOGRAPHIC PERFECTION OF SILICON WAFERS |
| SEMI M11 : 2004 | SPECIFICATIONS FOR SILICON EPITAXIAL WAFERS FOR INTEGRATED CIRCUIT (IC) APPLICATIONS |
| SEMI MF84:2012 | TEST METHOD FOR MEASURING RESISTIVITY OF SILICON WAFERS WITH AN IN-LINE FOUR-POINT PROBE |
| SEMI M59 : 2014 | TERMINOLOGY FOR SILICON TECHNOLOGY |
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