SEMI PV13 : 2014
Superseded
Superseded
A superseded Standard is one, which is fully replaced by another Standard, which is a new edition of the same Standard.
View Superseded by
TEST METHOD FOR CONTACTLESS EXCESS-CHARGE-CARRIER RECOMBINATION LIFETIME MEASUREMENT IN SILICON WAFERS, INGOTS, AND BRICKS USING AN EDDY-CURRENT SENSOR
Superseded date
08-02-2021
Superseded by
Published date
12-01-2013
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Specifies methods for measuring the excess-carrier lifetime in silicon wafers, ingots, and bricks with carrier recombination lifetime in the range of 0.1 to 15,000 [mu]s.
| DevelopmentNote |
Not available for sale from ILI, customer to contact SEMI. (03/2011)
|
| DocumentType |
Standard
|
| PublisherName |
Semiconductor Equipment & Materials Institute
|
| Status |
Superseded
|
| SupersededBy |
| SEMI M1 : 2017 | SPECIFICATION FOR POLISHED SINGLE CRYSTAL SILICON WAFERS |
| SEMI PV22 : 2017 | SPECIFICATION FOR SILICON WAFERS FOR USE IN PHOTOVOLTAIC SOLAR CELLS |
| SEMI MF84:2012 | TEST METHOD FOR MEASURING RESISTIVITY OF SILICON WAFERS WITH AN IN-LINE FOUR-POINT PROBE |
| SEMI MF533 : 2010(R2016) | TEST METHODS FOR THICKNESS AND THICKNESS VARIATION OF SILICON WAFERS |
| SEMI M59 : 2014 | TERMINOLOGY FOR SILICON TECHNOLOGY |
| SEMI MF723 : 2007E(R2012)E | PRACTICE FOR CONVERSION BETWEEN RESISTIVITY AND DOPANT OR CARRIER DENSITY FOR BORON-DOPED, PHOSPHOROUS-DOPED, AND ARSENIC-DOPED SILICON |
| SEMI MF28 : 2017 | TEST METHOD FOR MINORITY CARRIER LIFETIME IN BULK GERMANIUM AND SILICON BY MEASUREMENT OF PHOTOCONDUCTIVITY DECAY |
| SEMI MF43 : 2016 | TEST METHOD FOR RESISTIVITY OF SEMICONDUCTOR MATERIALS |
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