SN EN 60749-22 : 2003
Current
The latest, up-to-date edition.
SEMICONDUCTOR DEVICES - MECHANICAL AND CLIMATIC TEST METHODS - PART 22: BOND STRENGTH
12-01-2013
INTRODUCTION
1 Scope and object
1.1 General description of the test
1.2 Description of the test apparatus (for all methods)
2 Methods A and B (see also annex A)
2.1 Scope
2.2 General description of the test
3 Method C
3.1 Scope
3.2 Method C: Bond peel
4 Method D
4.1 Scope
4.2 Method D: Bond shear (applied to flip chip)
5 Methods E and F
5.1 Scope
5.2 Method E: Push-off test
5.3 Method F: Pull-off test
5.4 Failure criteria for both methods E and F:
5.5 Force to be applied (both methods)
6 Method G: Wire ball shear test
6.1 Scope
6.2 General description
6.3 Terms and definitions
6.4 Equipment and material
6.5 Procedure
6.6 Acceptable test limits
7 Information to be given in the relevant specification
Annex A (normative) Guidance
Applies to semiconductor devices (discrete devices and integrated circuits). Measures bond strength or determine compliance with specified bond strength requirements.
DocumentType |
Standard
|
PublisherName |
Swiss Standards
|
Status |
Current
|
Standards | Relationship |
DIN EN 60749-22:2003-12 | Identical |
I.S. EN 60749-22:2003 | Identical |
EN 60749-22:2003 | Identical |
BS EN 60749-22:2003 | Identical |
UNE-EN 60749-22:2004 | Identical |
IEC 60749-22:2002 | Identical |
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