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Foreword
Introduction
1 Scope
2 Normative references
3 Terms and definitions
4 Symbols and abbreviated terms
5 Apparatus
  5.1 Charge Control Technique
  5.2 Special Apparatus
  5.3 Specimen Mounting and Preparation
  5.4 Instrument Calibration
6 Reporting of information related to charge control
  6.1 Methods of charge control
  6.2 Reasons for needing charge control and choice
      of method
  6.3 Sample information
      6.3.1 Sample form
      6.3.2 Sample dimensions
      6.3.3 Sample mounting methods
      6.3.4 Sample treatment prior to or during analysis
  6.4 Values of experimental parameters
  6.5 Information on the effectiveness of method of
      charge control
7 Reporting of method(s) used for charge correction and the
  value of that correction
  7.1 Methods of charge correction
  7.2 Approach
  7.3 Value of correction energy
Annex A (informative) - Description of methods of charge
        control for Auger electron spectroscopy
  A.1 Introduction
  A.2 Hierarchical Table of Methods for Reducing Charging
  A.3 Methods for minimising charging during AES
      A.3.1 Introduction
      A.3.2 Decreasing sample resistivity
      A.3.3 Decreasing the insulator thickness (or effective
            insulator thickness)
      A.3.4 Reducing the current density, limiting primary-electron
            dose, and additional current sources
      A.3.5 Optimizing the total secondary-electron emission yield
  A.4 Considerations for Highly Non-Uniform Samples, Fibres,
      Particles and Sputter Depth Profiling
      A.4.1 Dealing with rough surfaces, particles, fibres and
            non-uniform samples
      A.4.2 Sputter depth profiling
  A.5 General considerations of charge build-up during AES
      A.5.1 Resistivity, capacitance, and surface potential
      A.5.2 Total secondary-electron yield and surface potential
      A.5.3 Charging transport and accumulation below the
            surface, time-dependent charge accumulation, and
            sample damage
Bibliography