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BS 6493-1.6:1984

Superseded

Superseded

A superseded Standard is one, which is fully replaced by another Standard, which is a new edition of the same Standard.

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Semiconductor devices. Discrete devices Recommendations for thyristors

Available format(s)

Hardcopy , PDF

Superseded date

15-06-2001

Language(s)

English

Published date

31-05-1984

€371.62
Excluding VAT

National foreword
Committees responsible
Chapter I: General
1. Introductory note
2. Scope
Chapter II: Terminology and letter symbols
1. Types of thyristors
2. General terms
3. Terms related to ratings and characteristics
3.1 Principal voltages, anode-cathode voltages
3.2 Principal currents, anode currents, cathode
     currents
3.3 Gate characteristics
3.4 Power dissipation
3.5 Other characteristics
4. Letter symbols
Chapter III: Essential ratings and characteristics
Section One - Reverse blocking triode thyristors
1. General
2. Rating conditions
3. Voltage and current ratings (limiting values)
4. Frequency ratings (limiting values)
5. Power dissipation ratings (limiting values
6. Temperature ratings (limiting values)
7. Electrical characteristics
8. Thermal characteristics
9. Mechanical characteristics and other data
10. Application data
Section Two - Bi-directional triode thyristors (triacs)
1. General
2. Rating conditions
3. Voltage and current ratings (limiting values)
4. Frequency ratings (limiting values)
5. Power dissipation ratings (limiting values)
6. Temperature ratings (limiting values)
7. Electrical characteristics
8. Thermal characteristics
9. Mechanical characteristics and other data
10. Application data
Section Three - Ambient-rated bi-directional trigger
diode thyristors
1. Type
2. Semiconductor material
3. Polarity
4. Outline
5. Limiting values
6. Characteristics
7. Supplementary information
Chapter IV: Methods of measurement
1. Electrical characteristics
1.1 General precautions
1.2 On-state voltage
1.3 Reverse current
1.4 Latching current
1.5 Holding current
1.6 Off-state current
1.7 Gate trigger current or voltage
1.8 Gate non-trigger voltage and gate non-trigger
     current
1.9 Gate controlled delay time and turn-on time
1.10 Circuit commutated turn-off time
1.11 Critical rate of rise of off-state voltage
1.12 Critical rate of rise of commutating voltage
1.13 Recovered charge and reverse recovery time (Qr,trr)
1.14 Circuit commutated turn-off time tq of a reverse
     conducting thyristor
2. Thermal measurements
2.1 Reference-point temperature
2.2 Thermal resistance and transient thermal impedance
3. Verification of ratings (limiting values)
3.1 Non-repetitive peak reverse voltage
3.2 Non-repetitive peak off-state voltage
3.3 Surge (non-repetitive) on-state current
3.4 On-state current ratings of fast-switching
     thyristors
3.5 Critical rate of rise of on-state current
3.6 Rating and test method for "peak case non-rupture
     current"
4. Thermal cycling load test
Chapter V: Acceptance and reliability
Section One - Electrical endurance test
1. General requirements
2. Specific requirements
Appendix A - Calculation methods for time varying load
             capability
Appendix B -

Recommendations for the use of thyristors.

Committee
EPL/47
DocumentType
Standard
Pages
120
PublisherName
British Standards Institution
Status
Superseded
SupersededBy

Standards Relationship
IEC 60747-6:2016 Identical

BS QC 750110:1990 Specification for harmonized system of quality assessment for electronic components. Semiconductor discrete devices. Blank detail specification. Reverse blocking triode thyristors, ambient and case-rated, up to 100 A
BS QC 750113:1994 Specification for harmonized system of quality assessment for electronic components. Blank detail specification: reverse blocking triode thyristors, ambient and case-rated, for currents greater than 100 A

BS 6493-1.1:1984 Semiconductor devices. Discrete devices General

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