BS 6493-1.8:1985
Superseded
A superseded Standard is one, which is fully replaced by another Standard, which is a new edition of the same Standard.
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Semiconductor devices. Discrete devices Recommendations for field-effect transistors
Hardcopy , PDF
15-06-2001
English
30-04-1985
Important note : Users cannot be edited or removed once added to your Multi user PDF.
National foreword
Committees responsible
Chapter I: General
1. Introductory note
2. Scope
3. Classification
Chapter II: Terminology and letter symbols
1. Types of field-effect transistors
2. General terms
3. Terms related to ratings and characteristics
4. Letter symbols
Chapter III: Essential ratings and characteristics
1. General
1.1 Device categories
1.2 Multiple-gate devices
1.3 Handling precautions
2. Ratings (limiting values)
2.1 Temperatures
2.2 Power dissipation
2.3 Voltages and currents
2.4 Mechanical data
3. Characteristics
3.1 Characteristics for low-frequency amplifier
applications
3.2 Characteristics for high-frequency amplifier
applications
3.3 Characteristics for switching applications
3.4 Characteristics for chopper applications
3.5 Characteristics for low-level d.c. amplifier
applications
3.6 Characteristics for voltage-controlled resistor
applications
3.7 Specific characteristics of matched-pair field-
effect transistors for low-frequency differential
applications
4. Application data
Chapter IV: Measuring methods
1. General
1.1 Polarity
1.2 General precautions
1.3 Handling precautions
1.4 Type categories
2. Gate cut-off current or gate leakage current
3. Drain current (types A,B and C)
4. Drain cut-off current (types A, B and C)
5. Gate-source cut-off voltage (types A and B)
6. Gate-source threshold voltage (type C)
7. Small-signal short-circuit input capacitance
(types A, B and C)
8. Small-signal short-circuit output conductance
(types A, B and C)
9. Small-signal short-circuit output capacitance
(types A, B and C)
10. Small-signal short-circuit forward transconductance
(types A, B and C)
11. Small-signal short-circuit feedback capacitance
(types A, B and C)
12. Noise (types A, B and C)
13. y-parameters (types A, B and C)
14. Switching times (types A, B and C)
15. Static drain-source on-state resistance or drain-
source on-state voltage and off-state resistance
16. On-state drain-source resistance (under small-
signal conditions)
17. Scattering parameters
18. Channel-case transient thermal impedance (ZthJC)
and thermal resistance (RthJC) of a power field-
effect transistor
19. Verification of the forward-bias and reverse-bias
safe operating area (FBSOA, RBSOA)
Chapter V: Acceptance and reliability
Section One: Electrical endurance tests
1. General requirements
2. Specific requirements
2.1 List of endurance tests
2.2 Conditions for endurance tests
2.3 Failure-defining characteristics and failure
criteria for acceptance tests (under consideration)
2.3 Failure-defining characteristics and failure
criteria for reliability tests
2.5 Procedure in case of a testing error
Table 1 - Failure-defining characteristics for
acceptance after endurance tests
Table 2 - Conditions for the endurance tests
Will provide general details, terminology, letter symbols, essential ratings and characteristics, and measuring methods for field effect transistors.
| Committee |
EPL/47
|
| DocumentType |
Standard
|
| Pages |
56
|
| PublisherName |
British Standards Institution
|
| Status |
Superseded
|
| SupersededBy |
| Standards | Relationship |
| IEC 60747-8:2010 | Identical |
| BS 6493-1.4:1992 | Semiconductor devices. Discrete devices Recommendations for microwave diodes and transistors - Recommendations for microwave devices |
| BS QC 750112:1988 | Specification for harmonized system of quality assessment for electronic components. Blank detail specification. Semiconductor devices. Discrete devices. Field-effect transistors. Blank detail specification for single-gate field-effect transistors, up to 5 W and 1 GHz |
| BS QC 750106:1993 | Specification for harmonized system of quality assessment for electronic components. Semiconductor discrete devices. Blank detail specification. Field-effect transistors for case-rated power amplifier applications |
| BS 6493-1.1:1984 | Semiconductor devices. Discrete devices General |
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