BS 9300:1969
Superseded
A superseded Standard is one, which is fully replaced by another Standard, which is a new edition of the same Standard.
Specification for semiconductor devices of assessed quality: generic data and methods of test
Hardcopy , PDF
30-10-1987
English
31-07-1969
Cooperating organizations
Foreword
Section 1. Principles and mandatory requirements
1.1 General matters
1.1.1 Scope
1.1.2 Related documents
1.1.3 Terminology
1.1.3.1 General terms
1.1.3.2 General characteristics
1.1.3.3 Signal diodes
1.1.3.4 Voltage reference, voltage regulator and
clipper diodes
1.1.3.5 Tunnel diodes
1.1.3.6 Variable capacitance diodes
1.1.3.7 Microwave diodes
1.1.3.8 Rectifier diodes
1.1.3.9 Thyristors
1.1.3.10 Transistors
1.1.3.11 Field effect transistors
1.1.3.12 Switching diodes
1.1.4 Letter symbols, signs and abbreviations
1.1.5 Graphical symbols
1.1.6 Marking of the part and package
1.1.6.1 Terminal identification
1.1.6.2 Colour band identification for manufacturer's
type number
1.1.6.3 Factory identification code or manufacturer's
name or trade-mark
1.1.6.4 Date code
1.1.7 Eligibility for qualification approval
1.1.8 Structurally similar devices
1.1.8.1 Devices from the same production line
1.1.8.2 Devices having a common encapsulation and
mounting method
1.1.9 Delayed delivery
1.1.10 Supplementary procedure for qualification
approval
1.1.11 Certified test records
1.1.12 Standard ratings and characteristics
1.1.13 Unchecked parameters
1.1.14 Procedure to be followed in the event of failure
at Group C or D inspection
1.1.15 Supplementary procedure for reduced inspection
1.1.16 Supplementary procedure for general application
category devices
1.2 Test procedures
1.2.1 Measurement conditions
1.2.2 Visual inspection
1.2.2.1 External inspection
1.2.2.2 Internal inspection
1.2.3 Dimensioning and gauging procedures
1.2.4 Electrical test procedures
1.2.4.1 General
1.2.4.2 Measurement methods:
0001 etc. General
1001 etc. Diodes, signal
1101 etc. Diodes, voltage regulator and
reference, transient suppressor
1201 etc. Diodes, tunnel
1301 etc. Diodes, variable capacitance
1401 etc. Diodes, microwave
1501 etc. Diodes, rectifier
2001 etc. Thyristors
3001 etc. Transistors, bipolar, general
measurements
3101 etc. Transistors, bipolar, low frequency
measurements
3200 etc. Transistors, bipolar, switching time
measurements
3400 etc. Transistors, bipolar, microwave
4000 etc. Transistors, field effect
1.2.5 Mechanical test procedures
1.2.5.1 Directions of applied forces for mechanical
tests
1.2.6 Environmental test procedures
1.2.6.1 Text deleted
1.2.6.2 Dry heat
1.2.6.3 Accelerated damp heat
1.2.6.4 Shock
1.2.6.5 Vibration (sinusoidal)
1.2.6.6 Acceleration, steady state
1.2.6.7 Rapid change of temperature, two-chamber method
1.2.6.8 Rapid change of temperature, two-bath method
1.2.6.9 Flammability
1.2.6.10 Solderability
1.2.6.11 Robustness of terminals
1.2.6.12 Resistance to solvents
1.2.6.13 Bondability
1.2.6.14 Hermeticity
1.2.6.15 Text deleted
1.2.6.16 Wire bond strength
1.2.6.17 Die shear strength
1.2.7 Electrical endurance test procedures
1.2.7.1 General
1.2.7.2 Signal diodes
1.2.7.3 Voltage reference voltage regulator, clipper
and transient suppressor diodes
1.2.7.4 Rectifier diodes
1.2.7.5 Thyristors
1.2.7.6 Transistors
1.2.7.7 Microwave diodes and transistors
1.2.7.8 Gunn oscillators
1.2.7.9 Avalanche oscillators
1.2.7.10 Rectifier bridges
1.2.8 Accelerated test procedures
1.2.8.1 Thermally accelerated tests
1.2.9 Encapsulating materials test procedures
1.2.9.1 Flammability (oxygen index method)
1.2.10 Screening procedures
1.2.10.1 Test sequences
1.2.10.2 Rapid change of temperature, thermal shock in
air, for screening
1.2.10.3 Post burn-in rejection criteria
1.3 Controlled environment
1.3.1 General
1.3.2 Air cleanliness
1.3.3 Humidity
1.3.4 Temperature
1.3.5 Biological
Section 2. Rules for the preparation of detail
specifications
2.1 Basic information
2.1.1 Originator of the specification
2.1.2 The numbering of detail specifications
2.1.3 Description of device and intended application
2.1.4 Outline drawing, terminations, etc.
2.1.5 Ratings (including limiting conditions of use)
2.1.6 Characteristics
2.1.7 Related documents
2.1.8 Supplementary information
2.1.9 Instructions for ordering devices
2.2 Inspection requirements
2.2.1 Group A inspection
2.2.2 Group B inspection
2.2.3 Group C inspection
2.2.4 Group D inspection
2.2.5 Solid encapsulation (plastics) devices
2.3 Certified test records
Appendices
A. Example of the layout of a detail specification
B. List of rules for the preparation of detail
specifications
C. Procedure for the adoption of specifications in the
CV7000 series into the BS 9000 system
D. Index of terms given in 1.1.3
Forms part of the system of standards for electronic components of assessed quality. Terms, definitions, test methods and other material necessary to implement fully the detail specifications for semiconductor devices. Included in section 2 are the general rules for preparation of detail specifications. Appendix C gives the agreed procedure for the adoption of specifications in the CV7000 series into the BS 9000 system. See also PD 6460.
Committee |
EPL/47
|
DevelopmentNote |
Inactive for the new design. Supersedes 89/32477 DC, BS 3494-1(1967) and BS 3494-2(1966). (10/2005)
|
DocumentType |
Standard
|
Pages |
428
|
PublisherName |
British Standards Institution
|
Status |
Superseded
|
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BS 9300 C599:1971 | Detail specification for silicon microwave switching diode, rod mounted |
BS 9305 N001:1972 | Detail specification for silicon voltage regulator diodes. 1.5 W, 3.3 to 33 V (5%), hermetically sealed. General application category Q |
BS 9301 N002:1971 | Detail specification for general purpose silicon signal diodes. 150 mA, 150 V, hermetically sealed, glass encapsulation. General application category Q |
BS 9300 C841-849:1971 | Detail specification for silicon voltage regulator diodes |
BS 9300 C780-831:1971 | Detail specification for silicon voltage regulator diodes |
BS CECC 20000:1983 | Harmonized system of quality assessment for electronic components: generic specification: semiconductor optoelectronic and liquid crystal devices |
BS 9300 C405-429:1971 | Detail specifications for silicon voltage-regulator diodes |
BS 9305 N041:1972 | Detail specification for silicon voltage regulator diodes. 400 mW, 2.7 to 33 V (5%), hermetically sealed, glass encapsulation. General application category Q |
BS 9300 C534:1971 | Detail specification for silicon coaxial resistive switching diode |
BS 9364 N017:1979 | Detail specification for low power silicon n-p-n switching transistors. 65 V, planar epitaxial, ambient rated, hermetic encapsulation (long lead version). Full plus additional assessment level |
BS 9300 C377-378:1971 | Detail specifications for silicon coaxial mixer diodes |
BS 9300 C778:1971 | Detail specification for a matched pair of germanium coaxial mixer diodes |
BS 9364 N011:1978 | Detail specification for low power silicon p-n-p switching transistors. 65 V, planar epitaxial, ambient rated, hermetic encapsulation. Full plus additional assessment level |
BS CECC 50008:1982 | Specification for harmonized system of quality assessment for electronic components. Blank detail specification: ambient-rated rectifier diodes |
BS CECC 50000:1987 | Harmonized system of quality assessment for electronic components. Generic specification: discrete semiconductor devices |
BS 9450:1998 | Specification for integrated electronic circuits and micro-assemblies of assessed quality (capability approval procedures). Generic data and methods of test |
BS CECC 63101:1985 | Specification for harmonized system of quality assessment for electronic components. Blank detail specification: film and hybrid integrated circuits |
BS 9364 N013:1979 | Detail specification for low power silicon p-n-p switching transistors. 25 V, planar epitaxial, ambient rated, hermetic encapsulation. Full plus additional assessment level |
BS CECC 90301:1985 | Specification for harmonized system of quality assessment for electronic components. Blank detail specification: integrated line transmitters and receivers |
BS 9364 N008 and N010:1978 | Detail specification for low power silicon n-p-n switching transistors. 20 V, planar epitaxial, ambient rated, hermetic encapsulation (long lead version). Full plus additional assessment level |
BS 9400:1970 | Specification for integrated electronic circuits and micro-assemblies of assessed quality (qualification approval procedures): generic data and methods of test |
BS CECC 90302:1986 | Specification for harmonized system of quality assessment for electronic components. Blank detail specification: integrated voltage comparators |
BS EN 150001:1993 | Specification for harmonized system of quality assessment for electronic components. Blank detail specification: general purpose semiconductor diodes |
BS 9305 N042:1972 | Detail specification for silicon voltage regulator diodes. 1.5 W, 6.8 to 200 V (5%), hermetically sealed. General application category C |
BS 9364 N007 and N009:1978 | Detail specification for low power silicon n-p-n switching transistors. 20 V, planar epitaxial, ambient rated, hermetic encapsulation. Full plus additional assessment level |
BS 9300 C771-772:1971 | Detail specification for coaxial mixer diodes |
BS 9300 C762:1971 | Detail specification for mixer diodes for use at X-band frequencies |
BS 9450:1975 | Specification for integrated electronic circuits and micro-assemblies of assessed quality (capability approval procedures): generic data and methods of test |
BS 9300 C667-668:1971 | Detail specification for silicon avalanche rectifier diodes |
BS 9300 C582-584:1971 | Detail specifications for reverse blocking triode thyristors |
BS 9300 C199-276:1971 | Detail specification for silicon voltage-regulator diodes |
BS CECC 50009:1982 | Specification for harmonized system of quality assessment for electronic components. Blank detail specification: case-rated rectifier diodes |
BS 9305 N044:1974 | Detail specification for silicon voltage regulator diodes. 1.0 W, 3.3 to 33 V (5%), hermetically sealed. Full assessment level |
BS 9364 N012:1978 | Detail specification for low power silicon p-n-p switching transistors. 65 V, planar epitaxial, ambient rated, hermetic encapsulation (long lead version). Full plus additional assessment level |
BS 9300 C476:1973 | Detail specification for silicon avalanche rectifier diode |
BS 9300 C379-388:1971 | Detail specifications for silicon stud mounted, power rectifier diodes |
BS 9300 C776-777:1971 | Detail specification for germanium coaxial mixer diodes |
BS 9364 N016:1979 | Detail specification for low power silicon n-p-n switching transistors. 65 V, planar epitaxial, ambient rated, hermetic encapsulation. Full plus additional assessment level |
BS 5295-3:1976 | Environmental cleanliness in enclosed spaces Guide to operational procedures and disciplines applicable to clean rooms, work stations and clean air devices |
BS 9000-1(1971) : LATEST | |
BS 4000:1968 | Sizes of paper and board |
IEC 60134:1961 | Rating systems for electronic tubes and valves and analogous semiconductor devices |
BS 4727(1971) : LATEST | |
BS PD6460(1971) : 1971 AMD 3200 | COLLECTED AMENDMENTS TO THE CV7000 SPECIFICATIONS FOR SEMICONDUCTORS ADOPTED AS BRITISH STANDARDS (9300C SERIES) |
BS 5295-2:1976 | Environmental cleanliness in enclosed spaces Guide to the construction and installation of clean rooms, work stations and clean air devices |
BS 3363:1968 | Schedule of letter symbols for semiconductor devices. |
BS 3934:1965 | Specification for dimensions of semiconductor devices and integrated electronic circuits |
BS 5295-4:1989 | Environmental cleanliness in enclosed spaces Specification for monitoring clean rooms and clean air devices to prove continued compliance with BS 5295:Part 1 |
BS 5295-1:1976 | Environmental cleanliness in enclosed spaces Specification for controlled environment clean rooms, work stations and clean air devices |
BS 2011(1967) : LATEST | |
BS 6001(1972) : AMD 5054 | SAMPLING PROCEDURES FOR INSPECTION BY ATTRIBUTES - SPECIFICATION FOR SAMPLING PLANS INDEXED BY ACCEPTABLE QUALITY LEVEL (AQL) FOR LOT - BY - LOT INSPECTION |
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