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BS 9300:1969

Superseded

Superseded

A superseded Standard is one, which is fully replaced by another Standard, which is a new edition of the same Standard.

Specification for semiconductor devices of assessed quality: generic data and methods of test

Available format(s)

Hardcopy , PDF

Superseded date

30-10-1987

Language(s)

English

Published date

31-07-1969

€416.02
Excluding VAT

Cooperating organizations
Foreword
Section 1. Principles and mandatory requirements
1.1 General matters
1.1.1 Scope
1.1.2 Related documents
1.1.3 Terminology
1.1.3.1 General terms
1.1.3.2 General characteristics
1.1.3.3 Signal diodes
1.1.3.4 Voltage reference, voltage regulator and
         clipper diodes
1.1.3.5 Tunnel diodes
1.1.3.6 Variable capacitance diodes
1.1.3.7 Microwave diodes
1.1.3.8 Rectifier diodes
1.1.3.9 Thyristors
1.1.3.10 Transistors
1.1.3.11 Field effect transistors
1.1.3.12 Switching diodes
1.1.4 Letter symbols, signs and abbreviations
1.1.5 Graphical symbols
1.1.6 Marking of the part and package
1.1.6.1 Terminal identification
1.1.6.2 Colour band identification for manufacturer's
         type number
1.1.6.3 Factory identification code or manufacturer's
         name or trade-mark
1.1.6.4 Date code
1.1.7 Eligibility for qualification approval
1.1.8 Structurally similar devices
1.1.8.1 Devices from the same production line
1.1.8.2 Devices having a common encapsulation and
         mounting method
1.1.9 Delayed delivery
1.1.10 Supplementary procedure for qualification
         approval
1.1.11 Certified test records
1.1.12 Standard ratings and characteristics
1.1.13 Unchecked parameters
1.1.14 Procedure to be followed in the event of failure
         at Group C or D inspection
1.1.15 Supplementary procedure for reduced inspection
1.1.16 Supplementary procedure for general application
         category devices
1.2 Test procedures
1.2.1 Measurement conditions
1.2.2 Visual inspection
1.2.2.1 External inspection
1.2.2.2 Internal inspection
1.2.3 Dimensioning and gauging procedures
1.2.4 Electrical test procedures
1.2.4.1 General
1.2.4.2 Measurement methods:
         0001 etc. General
         1001 etc. Diodes, signal
         1101 etc. Diodes, voltage regulator and
                    reference, transient suppressor
         1201 etc. Diodes, tunnel
         1301 etc. Diodes, variable capacitance
         1401 etc. Diodes, microwave
         1501 etc. Diodes, rectifier
         2001 etc. Thyristors
         3001 etc. Transistors, bipolar, general
                    measurements
         3101 etc. Transistors, bipolar, low frequency
                    measurements
         3200 etc. Transistors, bipolar, switching time
                    measurements
         3400 etc. Transistors, bipolar, microwave
         4000 etc. Transistors, field effect
1.2.5 Mechanical test procedures
1.2.5.1 Directions of applied forces for mechanical
         tests
1.2.6 Environmental test procedures
1.2.6.1 Text deleted
1.2.6.2 Dry heat
1.2.6.3 Accelerated damp heat
1.2.6.4 Shock
1.2.6.5 Vibration (sinusoidal)
1.2.6.6 Acceleration, steady state
1.2.6.7 Rapid change of temperature, two-chamber method
1.2.6.8 Rapid change of temperature, two-bath method
1.2.6.9 Flammability
1.2.6.10 Solderability
1.2.6.11 Robustness of terminals
1.2.6.12 Resistance to solvents
1.2.6.13 Bondability
1.2.6.14 Hermeticity
1.2.6.15 Text deleted
1.2.6.16 Wire bond strength
1.2.6.17 Die shear strength
1.2.7 Electrical endurance test procedures
1.2.7.1 General
1.2.7.2 Signal diodes
1.2.7.3 Voltage reference voltage regulator, clipper
         and transient suppressor diodes
1.2.7.4 Rectifier diodes
1.2.7.5 Thyristors
1.2.7.6 Transistors
1.2.7.7 Microwave diodes and transistors
1.2.7.8 Gunn oscillators
1.2.7.9 Avalanche oscillators
1.2.7.10 Rectifier bridges
1.2.8 Accelerated test procedures
1.2.8.1 Thermally accelerated tests
1.2.9 Encapsulating materials test procedures
1.2.9.1 Flammability (oxygen index method)
1.2.10 Screening procedures
1.2.10.1 Test sequences
1.2.10.2 Rapid change of temperature, thermal shock in
         air, for screening
1.2.10.3 Post burn-in rejection criteria
1.3 Controlled environment
1.3.1 General
1.3.2 Air cleanliness
1.3.3 Humidity
1.3.4 Temperature
1.3.5 Biological
Section 2. Rules for the preparation of detail
specifications
2.1 Basic information
2.1.1 Originator of the specification
2.1.2 The numbering of detail specifications
2.1.3 Description of device and intended application
2.1.4 Outline drawing, terminations, etc.
2.1.5 Ratings (including limiting conditions of use)
2.1.6 Characteristics
2.1.7 Related documents
2.1.8 Supplementary information
2.1.9 Instructions for ordering devices
2.2 Inspection requirements
2.2.1 Group A inspection
2.2.2 Group B inspection
2.2.3 Group C inspection
2.2.4 Group D inspection
2.2.5 Solid encapsulation (plastics) devices
2.3 Certified test records
Appendices
A. Example of the layout of a detail specification
B. List of rules for the preparation of detail
     specifications
C. Procedure for the adoption of specifications in the
     CV7000 series into the BS 9000 system
D. Index of terms given in 1.1.3

Forms part of the system of standards for electronic components of assessed quality. Terms, definitions, test methods and other material necessary to implement fully the detail specifications for semiconductor devices. Included in section 2 are the general rules for preparation of detail specifications. Appendix C gives the agreed procedure for the adoption of specifications in the CV7000 series into the BS 9000 system. See also PD 6460.

Committee
EPL/47
DevelopmentNote
Inactive for the new design. Supersedes 89/32477 DC, BS 3494-1(1967) and BS 3494-2(1966). (10/2005)
DocumentType
Standard
Pages
428
PublisherName
British Standards Institution
Status
Superseded

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BS 9300 C841-849:1971 Detail specification for silicon voltage regulator diodes
BS 9300 C780-831:1971 Detail specification for silicon voltage regulator diodes
BS CECC 20000:1983 Harmonized system of quality assessment for electronic components: generic specification: semiconductor optoelectronic and liquid crystal devices
BS 9300 C405-429:1971 Detail specifications for silicon voltage-regulator diodes
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BS 9300 C534:1971 Detail specification for silicon coaxial resistive switching diode
BS 9364 N017:1979 Detail specification for low power silicon n-p-n switching transistors. 65 V, planar epitaxial, ambient rated, hermetic encapsulation (long lead version). Full plus additional assessment level
BS 9300 C377-378:1971 Detail specifications for silicon coaxial mixer diodes
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BS 9364 N011:1978 Detail specification for low power silicon p-n-p switching transistors. 65 V, planar epitaxial, ambient rated, hermetic encapsulation. Full plus additional assessment level
BS CECC 50008:1982 Specification for harmonized system of quality assessment for electronic components. Blank detail specification: ambient-rated rectifier diodes
BS CECC 50000:1987 Harmonized system of quality assessment for electronic components. Generic specification: discrete semiconductor devices
BS 9450:1998 Specification for integrated electronic circuits and micro-assemblies of assessed quality (capability approval procedures). Generic data and methods of test
BS CECC 63101:1985 Specification for harmonized system of quality assessment for electronic components. Blank detail specification: film and hybrid integrated circuits
BS 9364 N013:1979 Detail specification for low power silicon p-n-p switching transistors. 25 V, planar epitaxial, ambient rated, hermetic encapsulation. Full plus additional assessment level
BS CECC 90301:1985 Specification for harmonized system of quality assessment for electronic components. Blank detail specification: integrated line transmitters and receivers
BS 9364 N008 and N010:1978 Detail specification for low power silicon n-p-n switching transistors. 20 V, planar epitaxial, ambient rated, hermetic encapsulation (long lead version). Full plus additional assessment level
BS 9400:1970 Specification for integrated electronic circuits and micro-assemblies of assessed quality (qualification approval procedures): generic data and methods of test
BS CECC 90302:1986 Specification for harmonized system of quality assessment for electronic components. Blank detail specification: integrated voltage comparators
BS EN 150001:1993 Specification for harmonized system of quality assessment for electronic components. Blank detail specification: general purpose semiconductor diodes
BS 9305 N042:1972 Detail specification for silicon voltage regulator diodes. 1.5 W, 6.8 to 200 V (5%), hermetically sealed. General application category C
BS 9364 N007 and N009:1978 Detail specification for low power silicon n-p-n switching transistors. 20 V, planar epitaxial, ambient rated, hermetic encapsulation. Full plus additional assessment level
BS 9300 C771-772:1971 Detail specification for coaxial mixer diodes
BS 9300 C762:1971 Detail specification for mixer diodes for use at X-band frequencies
BS 9450:1975 Specification for integrated electronic circuits and micro-assemblies of assessed quality (capability approval procedures): generic data and methods of test
BS 9300 C667-668:1971 Detail specification for silicon avalanche rectifier diodes
BS 9300 C582-584:1971 Detail specifications for reverse blocking triode thyristors
BS 9300 C199-276:1971 Detail specification for silicon voltage-regulator diodes
BS CECC 50009:1982 Specification for harmonized system of quality assessment for electronic components. Blank detail specification: case-rated rectifier diodes
BS 9305 N044:1974 Detail specification for silicon voltage regulator diodes. 1.0 W, 3.3 to 33 V (5%), hermetically sealed. Full assessment level
BS 9364 N012:1978 Detail specification for low power silicon p-n-p switching transistors. 65 V, planar epitaxial, ambient rated, hermetic encapsulation (long lead version). Full plus additional assessment level
BS 9300 C476:1973 Detail specification for silicon avalanche rectifier diode
BS 9300 C379-388:1971 Detail specifications for silicon stud mounted, power rectifier diodes
BS 9300 C776-777:1971 Detail specification for germanium coaxial mixer diodes
BS 9364 N016:1979 Detail specification for low power silicon n-p-n switching transistors. 65 V, planar epitaxial, ambient rated, hermetic encapsulation. Full plus additional assessment level

BS 5295-3:1976 Environmental cleanliness in enclosed spaces Guide to operational procedures and disciplines applicable to clean rooms, work stations and clean air devices
BS 9000-1(1971) : LATEST
BS 4000:1968 Sizes of paper and board
IEC 60134:1961 Rating systems for electronic tubes and valves and analogous semiconductor devices
BS 4727(1971) : LATEST
BS PD6460(1971) : 1971 AMD 3200 COLLECTED AMENDMENTS TO THE CV7000 SPECIFICATIONS FOR SEMICONDUCTORS ADOPTED AS BRITISH STANDARDS (9300C SERIES)
BS 5295-2:1976 Environmental cleanliness in enclosed spaces Guide to the construction and installation of clean rooms, work stations and clean air devices
BS 3363:1968 Schedule of letter symbols for semiconductor devices.
BS 3934:1965 Specification for dimensions of semiconductor devices and integrated electronic circuits
BS 5295-4:1989 Environmental cleanliness in enclosed spaces Specification for monitoring clean rooms and clean air devices to prove continued compliance with BS 5295:Part 1
BS 5295-1:1976 Environmental cleanliness in enclosed spaces Specification for controlled environment clean rooms, work stations and clean air devices
BS 2011(1967) : LATEST
BS 6001(1972) : AMD 5054 SAMPLING PROCEDURES FOR INSPECTION BY ATTRIBUTES - SPECIFICATION FOR SAMPLING PLANS INDEXED BY ACCEPTABLE QUALITY LEVEL (AQL) FOR LOT - BY - LOT INSPECTION

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