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BS EN 62047-10:2011

Current

Current

The latest, up-to-date edition.

Semiconductor devices. Micro-electromechanical devices Micro-pillar compression test for MEMS materials

Available format(s)

Hardcopy , PDF

Language(s)

English

Published date

30-09-2011

FOREWORD
1 Scope
2 Normative references
3 Symbols and designations
4 Test piece
5 Testing method and test apparatus
6 Test report
Annex A (informative) - Error estimation using
        finite element method
Bibliography
Annex ZA (normative) - Normative references to
         international publications with their
         corresponding European publications

Describes micro-pillar compression test method to measure compressive properties of MEMS materials with high accuracy, repeatability, and moderate effort of specimen fabrication.

Committee
EPL/47
DevelopmentNote
Supersedes 10/30211442 DC. (09/2011)
DocumentType
Standard
Pages
18
PublisherName
British Standards Institution
Status
Current
Supersedes

This part of IEC 62047 specifies micro-pillar compression test method to measure compressive properties of MEMS materials with high accuracy, repeatability, and moderate effort of specimen fabrication. The uniaxial compressive stress-strain relationship of a specimen is measured, and the compressive modulus of elasticity and yield strength can be obtained.

The test piece is a cylindrical pillar fabricated on a rigid (or highly stiff) substrate by micro-machining technologies, and its aspect ratio (ratio of pillar diameter to pillar height) should be more than 3. This standard is applicable to metallic, ceramic, and polymeric materials.

Standards Relationship
EN 62047-10 : 2011 Identical

ASTM E 9 : 2009 Standard Test Methods of Compression Testing of Metallic Materials at Room Temperature
IEC 62047-8:2011 Semiconductor devices - Micro-electromechanical devices - Part 8: Strip bending test method for tensile property measurement of thin films
EN 62047-8:2011 Semiconductor devices - Micro-electromechanical devices - Part 8: Strip bending test method for tensile property measurement of thin films

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