BS EN 62374-1:2010
Current
The latest, up-to-date edition.
Semiconductor devices Time-dependent dielectric breakdown (TDDB) test for inter-metal layers
Hardcopy , PDF
English
30-06-2011
1 Scope
2 Terms and definitions
3 Test equipment
4 Test samples
5 Procedures
6 Lifetime estimation
7 Lifetime dependence on inter-metal layer area
8 Summary
Annex A (informative) - Engineering supplementation for
lifetime estimation
Bibliography
Specifies a test method, test structure and lifetime estimation method of the time-dependent dielectric breakdown (TDDB) test for inter-metal layers applied in semiconductor devices.
| Committee |
EPL/47
|
| DevelopmentNote |
Supersedes 07/30171395 DC. (12/2010) Earlier supersedes BS EN 62374 in error by publisher, now has been re-instated. (06/2011)
|
| DocumentType |
Standard
|
| Pages |
20
|
| PublisherName |
British Standards Institution
|
| Status |
Current
|
| Supersedes |
This part of IEC 62374 describes a test method, test structure and lifetime estimation method of the time-dependent dielectric breakdown (TDDB) test for inter-metal layers applied in semiconductor devices.
| Standards | Relationship |
| EN 62374-1:2010/AC:2011 | Identical |
| IEC 62374-1:2010 | Identical |
| I.S. EN 62374-1:2010 | Equivalent |
| EN 62374-1:2010 | Equivalent |
| IEC 60809:2014/AMD1:2017 | Identical |
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