• I.S. EN 62374-1:2010

    Current The latest, up-to-date edition.

    SEMICONDUCTOR DEVICES - PART 1: TIME-DEPENDENT DIELECTRIC BREAKDOWN (TDDB) TEST FOR INTER-METAL LAYERS

    Available format(s):  Hardcopy, PDF

    Language(s):  English

    Published date:  01-01-2010

    Publisher:  National Standards Authority of Ireland

    For Harmonized Standards, check the EU site to confirm that the Standard is cited in the Official Journal.
    Only cited Standards give presumption of conformance to New Approach Directives/Regulations.

    Dates of withdrawal of national standards are available from NSAI.

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    Table of Contents - (Show below) - (Hide below)

    FOREWORD
    1 Scope
    2 Terms and definitions
    3 Test equipment
    4 Test samples
    5 Procedures
    6 Lifetime estimation
    7 Lifetime dependence on inter-metal layer area
    8 Summary
    Annex A (informative) - Engineering supplementation for
            lifetime estimation
    Bibliography

    Abstract - (Show below) - (Hide below)

    Specifies a test method, test structure and lifetime estimation method of the time-dependent dielectric breakdown (TDDB) test for inter-metal layers applied in semiconductor devices.

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    Development Note For CENELEC adoptions of IEC publications, please check www.iec.ch to be sure that you have any corrigenda that may apply. (01/2017)
    Document Type Standard
    Publisher National Standards Authority of Ireland
    Status Current
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