CEI EN 50513 : 2010
Current
The latest, up-to-date edition.
SOLAR WAFERS - DATA SHEET AND PRODUCT INFORMATION FOR CRYSTALLINE SILICON WAFERS FOR SOLAR CELL MANUFACTURING
Hardcopy , PDF
English
01-01-2010
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1 Scope
2 Normative references
3 Terms, definitions and acronyms
4 Crystallisation process
5 Product characteristics
6 Packaging, marking and storage
7 Major changes of product and processes
8 Wafer thickness
9 Variations in thickness
10 Waviness and warping
11 Grooves and step type saw mark
12 Corrosion rate
13 Determining carrier lifetime measured on as cut wafer
14 Determining minority carrier bulk lifetime measured
on passivated wafers (laboratory measurement)
15 Electrical resistivity of multi and mono crystalline
semiconductor wafers
16 Method for the measurement of substitutional atomic
carbon and interstitial oxygen content in silicon used
as solar material
Annex A (informative) - Geometric dimensions, surfaces
and edge characteristics
Annex B (informative) - Optional requirements
Bibliography
Specifies data sheet and product information for crystalline silicon (Si) - solar wafers and measurement methods for wafer properties.
| Committee |
CT 82
|
| DevelopmentNote |
Classificazione CEI 82-33. (06/2010)
|
| DocumentType |
Standard
|
| Pages |
38
|
| PublisherName |
Comitato Elettrotecnico Italiano
|
| Status |
Current
|
| Standards | Relationship |
| EN 50513:2009 | Identical |
| DIN 50441-5:2001-04 | TESTING OF MATERIALS FOR SEMICONDUCTOR TECHNOLOGY - DETERMINATION OF THE GEOMETRIC DIMENSIONS OF SEMICONDUCTOR WAFERS - PART 5: TERMS OF SHAPE AND FLATNESS DEVIATION |
| DIN 50434:1986-02 | TESTING OF MATERIALS FOR SEMICONDUCTOR TECHNOLOGY; DETECTION OF CRYSTAL DEFECTS IN MONOCRYSTALLINE SILICON USING ETCHING TECHNIQUES ON (111) AND (100) SURFACES |
| DIN 50432:1980-09 | TESTING OF SEMI-CONDUCTING INORGANIC MATERIALS; DETERMINATION OF THE CONDUCTIVITY TYPE OF SILICON OR GERMANIUM BY MEANS OF RECTIFICATION TEST OR HOT-PROBE |
| DIN 50438-2:1982-08 | TESTING OF MATERIALS FOR SEMICONDUCTOR TECHNOLOGY; DETERMINATION OF IMPURITY CONTENT IN SILICON BY INFRARED ABSORPTION; CARBON |
| DIN 50431:1988-05 | TESTING OF SEMICONDUCTOR MATERIALS; MEASUREMENT OF THE RESISTIVITY OF SILICON OR GERMANIUM SINGLE CRYSTALS BY MEANS OF THE FOUR PROBE DIRECT CURRENT METHOD WITH CO-LINEAR ARRAY |
| DIN 50441-1:1996-07 | TESTING OF MATERIALS FOR SEMICONDUCTOR TECHNOLOGY - DETERMINATION OF THE GEOMETRIC DIMENSIONS OF SEMICONDUCTOR WAFERS - PART 1: THICKNESS AND THICKNESS VARIATION |
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