CEI EN 62047-9 : 2012
Current
The latest, up-to-date edition.
SEMICONDUCTOR DEVICES - MICRO-ELECTROMECHANICAL DEVICES - PART 9: WAFER TO WAFER BONDING STRENGTH MEASUREMENT FOR MEMS
Hardcopy , PDF
English
01-01-2012
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FOREWORD
1 Scope
2 Normative references
3 Measurement methods
Annex A (informative) - Example of bonding force
Annex B (informative) - An example of the fabrication
process for three-point bending specimens
Bibliography
Annex ZA (normative) - Normative references to
international publications with their
corresponding European publications
Defines bonding strength measurement method of wafer to wafer bonding, type of bonding process such as silicon to silicon fusion bonding, silicon to glass anodic bonding, etc., and applicable structure size during MEMS processing/assembly.
| Committee |
CT 309
|
| DevelopmentNote |
Classificazione CEI 47-98. (08/2012)
|
| DocumentType |
Standard
|
| Pages |
32
|
| PublisherName |
Comitato Elettrotecnico Italiano
|
| Status |
Current
|
| Standards | Relationship |
| EN 62047-9:2011 | Identical |
| IEC 62047-9:2011 | Identical |
| IEC 62047-4:2008 | Semiconductor devices - Micro-electromechanical devices - Part 4: Generic specification for MEMS |
| EN ISO 6892-1:2016 | Metallic materials - Tensile testing - Part 1: Method of test at room temperature (ISO 6892-1:2016) |
| ISO 6892-1:2016 | Metallic materials Tensile testing Part 1: Method of test at room temperature |
| IEC 62047-2:2006 | Semiconductor devices - Micro-electromechanical devices - Part 2: Tensile testing method of thin film materials |
| EN 60749-19:2003/A1:2010 | Semiconductor devices - Mechanical and climatic test methods - Part 19: Die shear strength |
| IEC 60747-14-1:2010 | Semiconductor devices - Part 14-1: Semiconductor sensors - Generic specification for sensors |
| IEC 60749-19:2003+AMD1:2010 CSV | Semiconductor devices - Mechanical and climatic test methods - Part 19: Die shear strength |
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