EN 62047-9:2011

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Semiconductor devices - Micro-electromechanical devices - Part 9: Wafer to wafer bonding strength measurement for MEMS

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Published date: 19-08-2011

Publisher: European Committee for Standards - Electrical

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Table of Contents - (Show below) - (Hide below)

FOREWORD
1 Scope
2 Normative references
3 Measurement methods
Annex A (informative) - Example of bonding force
Annex B (informative) - An example of the fabrication
        process for three-point bending
        specimens
Bibliography
Annex ZA (normative) - Normative references to international
         publications with their corresponding European
         publications

Abstract - (Show below) - (Hide below)

IEC 62047-9:2011 describes bonding strength measurement method of wafer to wafer bonding, type of bonding process such as silicon to silicon fusion bonding, silicon to glass anodic bonding, etc., and applicable structure size during MEMS processing/assembly. The applicable wafer thickness is in the range of 10 ohmm to several millimeters. The contents of the corrigendum of March 2012 have been included in this copy.

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Committee	CLC/SR 47F
Document Type	Standard
ISBN
Pages
Published
Publisher	European Committee for Standards - Electrical
Status	Current

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Equivalent Standard(s)	Relationship
IEC 62047-9:2011	Identical
NEN EN IEC 62047-9 : 2011	Identical
DIN EN 62047-9:2012-03	Identical
NBN EN 62047-9 : 2011	Identical
BS EN 62047-9:2011	Identical
I.S. EN 62047-9:2011	Identical
CEI EN 62047-9 : 2012	Identical
PN EN 62047-9 : 2012	Identical
NF EN 62047-9 : 2012	Identical
UNE-EN 62047-9:2011	Identical

Standards Referenced By This Book - (Show below) - (Hide below)

BS EN 62047-15:2015	Semiconductor devices. Micro-electromechanical devices Test method of bonding strength between PDMS and glass
I.S. EN 62047-15:2015	SEMICONDUCTOR DEVICES - MICRO-ELECTROMECHANICAL DEVICES - PART 15: TEST METHOD OF BONDING STRENGTH BETWEEN PDMS AND GLASS
CEI EN 62047-15 : 2016	SEMICONDUCTOR DEVICES - MICRO-ELECTROMECHANICAL DEVICES - PART 15: TEST METHOD OF BONDING STRENGTH BETWEEN PDMS AND GLASS
EN 62047-15:2015	Semiconductor devices - Micro-electromechanical devices - Part 15: Test method of bonding strength between PDMS and glass

Standards Referencing This Book - (Show below) - (Hide below)

IEC 62047-4:2008	Semiconductor devices - Micro-electromechanical devices - Part 4: Generic specification for MEMS
EN ISO 6892-1:2016	Metallic materials - Tensile testing - Part 1: Method of test at room temperature (ISO 6892-1:2016)
ISO 6892-1:2016	Metallic materials Tensile testing Part 1: Method of test at room temperature
IEC 62047-2:2006	Semiconductor devices - Micro-electromechanical devices - Part 2: Tensile testing method of thin film materials
EN 62047-2:2006	Semiconductor devices - Micro-electromechanical devices - Part 2: Tensile testing method of thin film materials
EN 60749-19:2003/A1:2010	Semiconductor devices - Mechanical and climatic test methods - Part 19: Die shear strength
ASTM E 8M : 2004	Standard Test Methods for Tension Testing of Metallic Materials [Metric] (Withdrawn 2008)
IEC 60747-14-1:2010	Semiconductor devices - Part 14-1: Semiconductor sensors - Generic specification for sensors
EN 62047-4:2010	Semiconductor devices - Micro-electromechanical devices - Part 4: Generic specification for MEMS
IEC 60749-19:2003+AMD1:2010 CSV	Semiconductor devices - Mechanical and climatic test methods - Part 19: Die shear strength

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