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I.S. EN 62047-16:2015

Current

Current

The latest, up-to-date edition.

SEMICONDUCTOR DEVICES - MICRO-ELECTROMECHANICAL DEVICES - PART 16: TEST METHODS FOR DETERMINING RESIDUAL STRESSES OF MEMS FILMS - WAFER CURVATURE AND CANTILEVER BEAM DEFLECTION METHODS

Available format(s)

Hardcopy , PDF

Language(s)

English

Published date

01-01-2015

For Harmonized Standards, check the EU site to confirm that the Standard is cited in the Official Journal.

Only cited Standards give presumption of conformance to New Approach Directives/Regulations.


Dates of withdrawal of national standards are available from NSAI.

FOREWORD
1 Scope
2 Normative references
3 Terms and definitions
4 Testing methods
Bibliography
Annex ZA (normative) - Normative references to
         international publications with their
         corresponding European publications

Defines the test methods to measure the residual stresses of films with thickness in the range of 0,01 [mu]m to 10 [mu]m in MEMS structures fabricated by wafer curvature or cantilever beam deflection methods.

DevelopmentNote
For CENELEC adoptions of IEC publications, please check www.iec.ch to be sure that you have any corrigenda that may apply. (01/2017)
DocumentType
Standard
Pages
34
PublisherName
National Standards Authority of Ireland
Status
Current

Standards Relationship
EN 62047-16:2015 Identical

EN 62047-21:2014 Semiconductor devices - Micro-electromechanical devices - Part 21: Test method for Poisson's ratio of thin film MEMS materials
IEC 62047-21:2014 Semiconductor devices - Micro-electromechanical devices - Part 21: Test method for Poisson's ratio of thin film MEMS materials

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