EN 62417 : 2010
Current
The latest, up-to-date edition.
SEMICONDUCTOR DEVICES - MOBILE ION TESTS FOR METAL-OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTORS (MOSFETS) (IEC 62417:2010)
07-05-2010
FOREWORD
1 Scope
2 Abbreviations and letter symbols
3 General description
4 Test equipment
5 Test structures
6 Sample size
7 Conditions
8 Procedure
9 Criteria
10 Reporting
Gives a wafer level test procedure to determine the amount of positive mobile charge in oxide layers in metal-oxide semiconductor field effect transistors.
| Committee |
SR 47
|
| DocumentType |
Standard
|
| PublisherName |
European Committee for Standards - Electrical
|
| Status |
Current
|
| Standards | Relationship |
| NEN EN IEC 62417 : 2010 | Identical |
| UNE-EN 62417:2010 | Identical |
| I.S. EN 62417:2010 | Identical |
| IEC 62417:2010 | Identical |
| PN EN 62417 : 2010 | Identical |
| CEI EN 62417 : 2011 | Identical |
| BS EN 62417:2010 | Identical |
| NF EN 62417 : 2010 | Identical |
| NBN EN 62417 : 2010 | Identical |
| DIN EN 62417:2010-12 | Identical |
| PNE-FprEN 62417 | Identical |
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