EN 62417:2010
Current
The latest, up-to-date edition.
Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)
07-05-2010
FOREWORD
1 Scope
2 Abbreviations and letter symbols
3 General description
4 Test equipment
5 Test structures
6 Sample size
7 Conditions
8 Procedure
9 Criteria
10 Reporting
IEC 62417:2010 provides a wafer level test procedure to determine the amount of positive mobile charge in oxide layers in metal-oxide semiconductor field effect transistors. It is applicable to both active and parasitic field effect transistors. The mobile charge can cause degradation of microelectronic devices, e.g. by shifting the threshold voltage of MOSFETs or by inversion of the base in bipolar transistors.
| Committee |
CLC/TC 47X
|
| DocumentType |
Standard
|
| PublisherName |
European Committee for Standards - Electrical
|
| Status |
Current
|
| Standards | Relationship |
| NEN EN IEC 62417 : 2010 | Identical |
| I.S. EN 62417:2010 | Identical |
| IEC 62417:2010 | Identical |
| PN EN 62417 : 2010 | Identical |
| CEI EN 62417 : 2011 | Identical |
| BS EN 62417:2010 | Identical |
| NF EN 62417 : 2010 | Identical |
| NBN EN 62417 : 2010 | Identical |
| DIN EN 62417:2010-12 | Identical |
| UNE-EN 62417:2010 | Identical |
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