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I.S. EN 62417:2010

Current

Current

The latest, up-to-date edition.

SEMICONDUCTOR DEVICES - MOBILE ION TESTS FOR METAL-OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTORS (MOSFETS) (IEC 62417:2010 (EQV))

Available format(s)

Hardcopy , PDF

Language(s)

English

Published date

01-01-2010

For Harmonized Standards, check the EU site to confirm that the Standard is cited in the Official Journal.

Only cited Standards give presumption of conformance to New Approach Directives/Regulations.


Dates of withdrawal of national standards are available from NSAI.

FOREWORD
1 Scope
2 Abbreviations and letter symbols
3 General description
4 Test equipment
5 Test structures
6 Sample size
7 Conditions
8 Procedure
9 Criteria
10 Reporting

Gives a wafer level test procedure to determine the amount of positive mobile charge in oxide layers in metal-oxide semiconductor field effect transistors.

DevelopmentNote
For CENELEC adoptions of IEC publications, please check www.iec.ch to be sure that you have any corrigenda that may apply. (01/2017)
DocumentType
Standard
Pages
14
PublisherName
National Standards Authority of Ireland
Status
Current

Standards Relationship
IEC 62417:2010 Identical
EN 62417 : 2010 Identical

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