Customer Support: +353 (0)1 857 6730

Corporate Website About Us
  • There are no items in your cart
Please enter a keyword to search
Advanced search
Home
BSI
BS EN 62417:2010

BS EN 62417:2010

Current

Current

The latest, up-to-date edition.

Semiconductor devices. Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)

Available format(s)

Hardcopy , PDF

Language(s)

English

Published date

30-06-2010

Publisher

British Standards Institution

1 Scope
2 Abbreviations and letter symbols
3 General description
4 Test equipment
5 Test structures
6 Sample size
7 Conditions
8 Procedure
9 Criteria
10 Reporting

Gives a wafer level test procedure to determine the amount of positive mobile charge in oxide layers in metal-oxide semiconductor field effect transistors.

This present standard provides a wafer level test procedure to determine the amount of positive mobile charge in oxide layers in metal-oxide semiconductor field effect transistors. . It is applicable to both active and parasitic field effect transistors. The mobile charge can cause degradation of microelectronic devices, e.g. by shifting the threshold voltage of MOSFETs or by inversion of the base in bipolar transistors.

Committee
EPL/47
DevelopmentNote
Supersedes 07/30163752 DC and 08/30177346 DC. (06/2010)
DocumentType
Standard
Pages
12
PublisherName
British Standards Institution
Status
Current
Supersedes

Standards Relationship
IEC 62417:2010 Identical
EN 62417 : 2010 Identical

View more information
€131.12
Excluding VAT
EUR
CAD
CHF
CNY
DKK
EUR
GBP
HKD
IDR
INR
JPY
KRW
MXN
NOK
NZD
SEK
SGD
USD
ZAR
Hardcopy - English
PDF - English
01
02
03
04
05
06
07
08
09
10
11
12
13
14
15
16
17
18
19
20

Access your standards online with a subscription

Features

  • Simple online access to standards, technical information and regulations.

  • Critical updates of standards and customisable alerts and notifications.

  • Multi-user online standards collection: secure, flexible and cost effective.

Get in touch with us