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EN 62417 : 2010

Current

Current

The latest, up-to-date edition.

SEMICONDUCTOR DEVICES - MOBILE ION TESTS FOR METAL-OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTORS (MOSFETS) (IEC 62417:2010)

Published date

07-05-2010

FOREWORD
1 Scope
2 Abbreviations and letter symbols
3 General description
4 Test equipment
5 Test structures
6 Sample size
7 Conditions
8 Procedure
9 Criteria
10 Reporting

Gives a wafer level test procedure to determine the amount of positive mobile charge in oxide layers in metal-oxide semiconductor field effect transistors.

Committee
SR 47
DocumentType
Standard
PublisherName
European Committee for Standards - Electrical
Status
Current

Standards Relationship
NEN EN IEC 62417 : 2010 Identical
UNE-EN 62417:2010 Identical
I.S. EN 62417:2010 Identical
IEC 62417:2010 Identical
PN EN 62417 : 2010 Identical
CEI EN 62417 : 2011 Identical
BS EN 62417:2010 Identical
NF EN 62417 : 2010 Identical
NBN EN 62417 : 2010 Identical
DIN EN 62417:2010-12 Identical

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