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I.S. EN 60749-23:2004

Current

Current

The latest, up-to-date edition.

SEMICONDUCTOR DEVICES - MECHANICAL AND CLIMATIC TEST METHODS - PART 23: HIGH TEMPERATURE OPERATING LIFE

Available format(s)

Hardcopy , PDF

Language(s)

English

Published date

01-01-2004

For Harmonized Standards, check the EU site to confirm that the Standard is cited in the Official Journal.

Only cited Standards give presumption of conformance to New Approach Directives/Regulations.


Dates of withdrawal of national standards are available from NSAI.

€19.00
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FOREWORD
1 Scope
2 Normative references
3 Terms and definitions
4 Test apparatus
  4.1 Circuitry
      4.1.1 Device schematic
      4.1.2 Power
  4.2 Device mounting
  4.3 Power supplies and signal sources
  4.4 Environmental chamber
5 Procedure
  5.1 Stress duration
  5.2 Stress conditions
      5.2.1 Ambient temperature
      5.2.2 Operating voltage
      5.2.3 Biasing configurations
6 Cool-down
7 Measurements
8 Failure criteria
9 Summary
Annex ZA (normative) - Normative references to
         international publications with their
         corresponding European publications

Determines the effects of bias conditions and temperature on solid state devices over time. It simulates the device operating condition in an accelerated way, and is primarily used for device qualification and reliability monitoring.

DevelopmentNote
For CENELEC adoptions of IEC publications, please check www.iec.ch to be sure that you have any corrigenda that may apply. (01/2017)
DocumentType
Standard
Pages
27
PublisherName
National Standards Authority of Ireland
Status
Current

EN 60749-34:2010 Semiconductor devices - Mechanical and climatic test methods - Part 34: Power cycling
IEC 60749-34:2010 Semiconductor devices - Mechanical and climatic test methods - Part 34: Power cycling

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