I.S. EN 60749-23:2004
Current
The latest, up-to-date edition.
SEMICONDUCTOR DEVICES - MECHANICAL AND CLIMATIC TEST METHODS - PART 23: HIGH TEMPERATURE OPERATING LIFE
Hardcopy , PDF
English
01-01-2004
For Harmonized Standards, check the EU site to confirm that the Standard is cited in the Official Journal.
Only cited Standards give presumption of conformance to New Approach Directives/Regulations.
Dates of withdrawal of national standards are available from NSAI.
FOREWORD
1 Scope
2 Normative references
3 Terms and definitions
4 Test apparatus
4.1 Circuitry
4.1.1 Device schematic
4.1.2 Power
4.2 Device mounting
4.3 Power supplies and signal sources
4.4 Environmental chamber
5 Procedure
5.1 Stress duration
5.2 Stress conditions
5.2.1 Ambient temperature
5.2.2 Operating voltage
5.2.3 Biasing configurations
6 Cool-down
7 Measurements
8 Failure criteria
9 Summary
Annex ZA (normative) - Normative references to
international publications with their
corresponding European publications
Determines the effects of bias conditions and temperature on solid state devices over time. It simulates the device operating condition in an accelerated way, and is primarily used for device qualification and reliability monitoring.
DevelopmentNote |
For CENELEC adoptions of IEC publications, please check www.iec.ch to be sure that you have any corrigenda that may apply. (01/2017)
|
DocumentType |
Standard
|
Pages |
27
|
PublisherName |
National Standards Authority of Ireland
|
Status |
Current
|
Standards | Relationship |
DIN EN 60749-23:2011-07 | Identical |
IEC 60749-23:2004+AMD1:2011 CSV | Identical |
NBN EN 60749-23 : 2005 AMD 1 2011 | Identical |
NF EN 60749-23 : 2004 AMD 1 2012 | Identical |
EN 60749-23:2004/A1:2011 | Identical |
UNE-EN 60749-23:2005 | Identical |
BS EN 60749-23 : 2004 | Identical |
EN 60749-34:2010 | Semiconductor devices - Mechanical and climatic test methods - Part 34: Power cycling |
IEC 60749-34:2010 | Semiconductor devices - Mechanical and climatic test methods - Part 34: Power cycling |
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