I.S. EN 62374-1:2010
Current
The latest, up-to-date edition.
SEMICONDUCTOR DEVICES - PART 1: TIME-DEPENDENT DIELECTRIC BREAKDOWN (TDDB) TEST FOR INTER-METAL LAYERS
Hardcopy , PDF
English
01-01-2010
For Harmonized Standards, check the EU site to confirm that the Standard is cited in the Official Journal.
Only cited Standards give presumption of conformance to New Approach Directives/Regulations.
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FOREWORD
1 Scope
2 Terms and definitions
3 Test equipment
4 Test samples
5 Procedures
6 Lifetime estimation
7 Lifetime dependence on inter-metal layer area
8 Summary
Annex A (informative) - Engineering supplementation for
lifetime estimation
Bibliography
Specifies a test method, test structure and lifetime estimation method of the time-dependent dielectric breakdown (TDDB) test for inter-metal layers applied in semiconductor devices.
| DevelopmentNote |
For CENELEC adoptions of IEC publications, please check www.iec.ch to be sure that you have any corrigenda that may apply. (01/2017)
|
| DocumentType |
Standard
|
| Pages |
22
|
| PublisherName |
National Standards Authority of Ireland
|
| Status |
Current
|
| Standards | Relationship |
| EN 62374-1:2010/AC:2011 | Identical |
| IEC 62374-1:2010 | Identical |
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