I.S. EN 62417:2010
Current
The latest, up-to-date edition.
SEMICONDUCTOR DEVICES - MOBILE ION TESTS FOR METAL-OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTORS (MOSFETS) (IEC 62417:2010 (EQV))
Hardcopy , PDF
English
01-01-2010
For Harmonized Standards, check the EU site to confirm that the Standard is cited in the Official Journal.
Only cited Standards give presumption of conformance to New Approach Directives/Regulations.
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FOREWORD
1 Scope
2 Abbreviations and letter symbols
3 General description
4 Test equipment
5 Test structures
6 Sample size
7 Conditions
8 Procedure
9 Criteria
10 Reporting
Gives a wafer level test procedure to determine the amount of positive mobile charge in oxide layers in metal-oxide semiconductor field effect transistors.
| DevelopmentNote |
For CENELEC adoptions of IEC publications, please check www.iec.ch to be sure that you have any corrigenda that may apply. (01/2017)
|
| DocumentType |
Standard
|
| Pages |
14
|
| PublisherName |
National Standards Authority of Ireland
|
| Status |
Current
|
| Standards | Relationship |
| IEC 62417:2010 | Identical |
| EN 62417 : 2010 | Identical |
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