IEC 60747-14-3:2009
Current
The latest, up-to-date edition.
Semiconductor devices - Part 14-3: Semiconductor sensors - Pressure sensors
Hardcopy , PDF , PDF 3 Users , PDF 5 Users , PDF 9 Users
English - French
29-04-2009
FOREWORD
INTRODUCTION
1 Scope
2 Normative references
3 Terminology and letter symbols
3.1 General terms
3.1.1 Semiconductor pressure sensors
3.1.2 Sensing methods
3.2 Definitions
3.3 Letter symbols
3.3.1 General
3.3.2 List of letter symbols
4 Essential ratings and characteristics
4.1 General
4.1.1 Sensor materials - for piezoelectrical sensors
4.1.2 Handling precautions
4.1.3 Types
4.2 Ratings (limiting values)
4.2.1 Pressures
4.2.2 Temperatures
4.2.3 Voltage
4.3 Characteristics
4.3.1 Full-scale span (V[FSS])
4.3.2 Full-scale output (V[FSO])
4.3.3 Sensitivity (S)
4.3.4 Temperature coefficient of full-scale sensitivity
(alpha[s])
4.3.5 Offset voltage (V[os])
4.3.6 Temperature coefficient of offset voltage
(alpha[vos])
4.3.7 Pressure hysteresis of output voltage (H[ohp])
4.3.8 Temperature hysteresis of output voltage (H[ohT])
4.3.9 Response time
4.3.10 Warm-up
4.3.11 Dimensions
4.3.12 Mechanical characteristics
5 Measuring methods
5.1 General
5.1.1 General precautions
5.1.2 Measuring conditions
5.2 Output voltage measurements
5.2.1 Purpose
5.2.2 Principles of measurement
5.3 Sensitivity (S)
5.3.1 Purpose
5.3.2 Measuring procedure
5.3.3 Specified conditions
5.4 Temperature coefficient of sensitivity (alpha[s])
5.4.1 Purpose
5.4.2 Specified conditions
5.5 Temperature coefficient of full-scale span
(alpha V[FSS]) and maximum temperature deviation
of full-scale span (delta V[FSS])
5.5.1 Purpose
5.5.2 Specified conditions
5.6 Temperature coefficient of offset voltage
(alpha V[os]) and (alpha V[os])
5.6.1 Purpose
5.6.2 Specified conditions
5.7 Pressure hysteresis of output voltage (H[ohp])
5.7.1 Purpose
5.7.2 Circuit diagram and circuit description
5.7.3 Specified conditions
5.8 Temperature hysteresis of output voltage (H[ohT])
5.8.1 Purpose
5.8.2 Measuring procedure
5.8.3 Specified conditions
5.9 Linearity
5.9.1 Purpose
5.9.2 Specified conditions
5.9.3 Measuring procedure
IEC 60747-14-3:2009 specifies requirements for semiconductor pressure sensors measuring absolute, gauge or differential pressures. The major technical change with regard to the previous edition is the addition of a new subclause 5.9 (measuring method of linearity).
This publication should be read in conjunction with IEC 60747-1:2006.
Committee |
TC 47/SC 47E
|
DevelopmentNote |
To be read in conjunction with IEC 60747-1. (04/2009) Stability Date: 2017. (09/2017)
|
DocumentType |
Standard
|
Pages |
37
|
PublisherName |
International Electrotechnical Committee
|
Status |
Current
|
Supersedes |
Standards | Relationship |
BS IEC 60747-14.3 : 2009 | Identical |
NEN IEC 60747-14-3 : 2009 | Identical |
BS IEC 60747-14-3:2009 | Identical |
17/30355772 DC : 0 | BS EN 62047-33 ED.1.0 - SEMICONDUCTOR DEVICES - MICRO-ELECTROMECHANICAL DEVICES - PART 33: MEMS PIEZORESISTIVE PRESSURE-SENSITIVE DEVICE |
17/30355776 DC : 0 | BS EN 62047-34 ED.1.0 - SEMICONDUCTOR DEVICES - MICRO-ELECTROMECHANICAL DEVICES - PART 34: TEST METHOD FOR MEMS PIEZORESISTIVE PRESSURE-SENSITIVE DEVICE ON WAFER |
BS ISO 19614:2017 | Traditional Chinese medicine. Pulse graph force transducer |
16/30301330 DC : 0 | BS ISO 19614 - TRADITIONAL CHINESE MEDICINE - PULSE GRAPH FORCE TRANSDUCER |
ISO 19614:2017 | Traditional Chinese medicine — Pulse graph force transducer |
IEC 60747-14-1:2010 | Semiconductor devices - Part 14-1: Semiconductor sensors - Generic specification for sensors |
IEC 60747-1:2006+AMD1:2010 CSV | Semiconductor devices - Part 1: General |
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