• IEC 62047-14:2012

    Current The latest, up-to-date edition.

    Semiconductor devices - Micro-electromechanical devices - Part 14: Forming limit measuring method of metallic film materials

    Available format(s):  Hardcopy, PDF, PDF 3 Users, PDF 5 Users, PDF 9 Users

    Language(s):  English - French

    Published date:  28-02-2012

    Publisher:  International Electrotechnical Committee

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    Table of Contents - (Show below) - (Hide below)

    FOREWORD
    1 Scope
    2 Normative references
    3 Terms, definitions and symbols
    4 Testing method
    5 Test procedure and analysis
    6 Test report
    Annex A (informative) - Principles of the forming limit
            diagram
    Annex B (informative) - Grid marking method
    Annex C (informative) - Gripping method
    Annex D (informative) - Strain measuring method

    Abstract - (Show below) - (Hide below)

    IEC 62047-14:2012 describes definitions and procedures for measuring the forming limit of metallic film materials with a thickness range from 0,5 μm to 300 μm. The metallic film materials described herein are typically used in electric components, MEMS and micro-devices. When metallic film materials used in MEMS (see 2.1.2 of IEC 62047-1:2005) are fabricated by a forming process such as imprinting, it is necessary to predict the material failure in order to increase the reliability of the components. Through this prediction, the effectiveness of manufacturing MEMS components by a forming process can also be improved, because the period of developing a product can be reduced and manufacturing costs can thus be decreased. This standard presents one of the prediction methods for material failure in imprinting process.

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    Development Note Stability date: 2018. (09/2017)
    Document Type Standard
    Publisher International Electrotechnical Committee
    Status Current

    Standards Referencing This Book - (Show below) - (Hide below)

    IEC 62047-1:2016 Semiconductor devices - Micro-electromechanical devices - Part 1: Terms and definitions
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