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IEC 62374:2007

Current

Current

The latest, up-to-date edition.

Semiconductor devices - Time dependent dielectric breakdown (TDDB) test for gate dielectric films

Available format(s)

Hardcopy , PDF , PDF 3 Users , PDF 5 Users , PDF 9 Users

Language(s)

English - French

Published date

29-03-2007

€155.95
Excluding VAT

FOREWORD
1 Scope
2 Terms and definitions
3 Test equipment
4 Test samples
  4.1 General
  4.2 Test structure: capacitor structure
  4.3 Area
5 Procedures
  5.1 General
  5.2 Pre-test
  5.3 Test conditions
  5.4 Criteria
6 Lifetime estimation
  6.1 General
  6.2 Acceleration model
  6.3 A procedure for a lifetime estimation
7 Lifetime dependence on gate oxide area
Annex A (informative) Supplementary determining test
                      condition and data analysis
Bibliography

Provides a test method of Time Dependent Dielectric Breakdown(TDDB) for gate dielectric films on semiconductor devices and a product lifetime estimation method of TDDB failure

Committee
TC 47
DevelopmentNote
Stability Date: 2020. (09/2017)
DocumentType
Standard
Pages
43
PublisherName
International Electrotechnical Committee
Status
Current

Standards Relationship
NF EN 62374 : 2008 Identical
NEN EN IEC 62374 : 2007 Identical
I.S. EN 62374:2007 Identical
PN EN 62374 : 2007 Identical
BS EN 62374:2007 Identical
CEI EN 62374 : 2009 Identical
EN 62374:2007 Identical
UNE-EN 62374:2007 Identical
PNE-prEN 62374 Identical

IEC TS 62686-1:2015 Process management for avionics - Electronic components for aerospace, defence and high performance (ADHP) applications - Part 1: General requirements for high reliability integrated circuits and discrete semiconductors
PD IEC/TS 62686-1:2015 Process management for avionics. Electronic components for aerospace, defence and high performance (ADHP) applications General requirements for high reliability integrated circuits and discrete semiconductors

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