SEMI 3D10 : 2014
Superseded
Superseded
A superseded Standard is one, which is fully replaced by another Standard, which is a new edition of the same Standard.
View Superseded by
GUIDE TO DESCRIBING MATERIALS PROPERTIES FOR INTERMEDIATE WAFERS FOR USE IN A 300 MM 3DS-IC WAFER STACK
Superseded date
05-10-2020
Superseded by
Published date
26-08-2014
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Pertains to address the needs of the 3D Stacked IC (3DS-IC) industry by providing the tools needed to procure processed wafers to be used in a 3DS-IC process.
| DevelopmentNote |
Not available for sale from ILI, customer to contact SEMI. (08/2014)
|
| DocumentType |
Standard
|
| PublisherName |
Semiconductor Equipment & Materials Institute
|
| Status |
Superseded
|
| SupersededBy |
| SEMI MF81 : 2005(R2016) | TEST METHOD FOR MEASURING RADIAL RESISTIVITY VARIATION ON SILICON WAFERS |
| SEMI MF1391 : 2007(R2012) | TEST METHOD FOR INTERSTITIAL OXYGEN CONTENT OF SILICON BY INFRARED ABSORPTION WITH SHORT BASELINE |
| SEMI M59 : 2014 | TERMINOLOGY FOR SILICON TECHNOLOGY |
| SEMI M45 : 2010(R2017) | SPECIFICATION FOR 300 MM WAFER SHIPPING SYSTEM |
| SEMI MF1530 : 2007(R2018) | TEST METHOD FOR MEASURING FLATNESS, THICKNESS, AND TOTAL THICKNESS VARIATION ON SILICON WAFERS BY AUTOMATED NON-CONTACT SCANNING |
| SEMI MF951 : 2005(R2016) | TEST METHOD FOR DETERMINATION OF RADIAL INTERSTITIAL OXYGEN VARIATION IN SILICON WAFERS |
| SEMI 3D2 : 2016 | SPECIFICATION FOR GLASS CARRIER WAFERS FOR 3DS-IC APPLICATIONS |
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