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SEMI HB1 : 2016

Current

Current

The latest, up-to-date edition.

SPECIFICATION FOR SAPPHIRE WAFERS INTENDED FOR USE FOR MANUFACTURING HIGH BRIGHTNESS-LIGHT EMITTING DIODE DEVICES

Published date

07-02-2013

Includes dimensional, wafer preparation, and crystallographic orientation characteristics for five categories of single-crystal single-side polished sapphire wafers used in HB-LED manufacturing.

DevelopmentNote
Not available for sale from ILI, customer to contact SEMI. (01/2013)
DocumentType
Standard
PublisherName
Semiconductor Equipment & Materials Institute
Status
Current

SEMI HB7 : 2015 TEST METHOD FOR MEASUREMENT OF WAVINESS OF CRYSTALLINE SAPPHIRE WAFERS BY USING OPTICAL PROBES
SEMI HB2 : 2013(R2018) SPECIFICATION FOR 150 MM OPEN PLASTIC AND METAL WAFER CASSETTES INTENDED FOR USE FOR MANUFACTURING HB-LED DEVICES
SEMI HB6 : 2016 TEST METHOD FOR MEASUREMENT OF THICKNESS AND SHAPE OF CRYSTALLINE SAPPHIRE WAFERS BY USING OPTICAL PROBES
SEMI 3D4 : 2015 GUIDE FOR METROLOGY FOR MEASURING THICKNESS, TOTAL THICKNESS VARIATION (TTV), BOW, WARP/SORI, AND FLATNESS OF BONDED WAFER STACKS
SEMI HB5 : 2015 TEST METHOD FOR MEASUREMENT OF SAW MARKS ON CRYSTALLINE SAPPHIRE WAFERS BY USING OPTICAL PROBES

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SEMI M20 : 2015 PRACTICE FOR ESTABLISHING A WAFER COORDINATE SYSTEM
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SEMI MF1152 : 2016 TEST METHOD FOR DIMENSIONS OF NOTCHES ON SILICON WAFERS
SEMI M40 : 2014 GUIDE FOR MEASUREMENT OF ROUGHNESS OF PLANAR SURFACES ON POLISHED WAFERS
SEMI MF523 : 2007(R2018) PRACTICE FOR UNAIDED VISUAL INSPECTION OF POLISHED SILICON WAFER SURFACES
SEMI MF847 : 2016 TEST METHOD FOR MEASURING CRYSTALLOGRAPHIC ORIENTATION OF FLATS ON SINGLE CRYSTAL SILICON WAFERS BY X-RAY TECHNIQUES
SEMI M65 : 2016 SPECIFICATION FOR SAPPHIRE SUBSTRATES TO USE FOR COMPOUND SEMICONDUCTOR EPITAXIAL WAFERS
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