Customer Support: +353 (0)1 857 6730

Corporate Website About Us
  • There are no items in your cart
Please enter a keyword to search
Advanced search
Home
SEMI
SEMI MF928 : 2017

SEMI MF928 : 2017

Superseded

Superseded

A superseded Standard is one, which is fully replaced by another Standard, which is a new edition of the same Standard.

View Superseded by
superseded

A superseded Standard is one, which is fully replaced by another Standard, which is a new edition of the same Standard.

TEST METHOD FOR EDGE CONTOUR OF CIRCULAR SEMICONDUCTOR WAFERS AND RIGID DISK SUBSTRATES

Available format(s)

Hardcopy

Superseded date

04-07-2022

Language(s)

English

Published date

01-01-2017

Publisher

Semiconductor Equipment & Materials Institute

The edges of circular wafers of electronic materials are frequently required to be shaped after cutting the wafers from the ingot. Contouring the wafer edge reduces the incidence of chipping and minimizes epitaxial edge crown and photoresist edge bead during subsequent processing of the wafer..

DevelopmentNote
Not available for sale from ILI, customer to contact SEMI. (02/2005)
DocumentType
Test Method
Pages
0
PublisherName
Semiconductor Equipment & Materials Institute
Status
Superseded
SupersededBy

SEMI M3 : 2004 SPECIFICATIONS FOR POLISHED MONOCRYSTALLINE SAPPHIRE SUBSTRATES
SEMI M49 : 2016 GUIDE FOR SPECIFYING GEOMETRY MEASUREMENT SYSTEMS FOR SILICON WAFERS FOR THE 130 NM TO 16 NM TECHNOLOGY GENERATIONS
SEMI M1 : 2017 SPECIFICATION FOR POLISHED SINGLE CRYSTAL SILICON WAFERS
SEMI M41 : 2015 SPECIFICATION OF SILICON-ON-INSULATOR (SOI) FOR POWER DEVICE/ICS
SEMI 3D16 : 2016 SPECIFICATION FOR GLASS BASE MATERIAL FOR SEMICONDUCTOR PACKAGING
SEMI M74 : 2008(R2018) SPECIFICATION FOR 450 MM DIAMETER MECHANICAL HANDLING POLISHED WAFERS
SEMI M84 : 2014E SPECIFICATIONS FOR POLISHED SINGLE CRYSTAL SILICON WAFERS FOR GALLIUM NITRIDE-ON-SILICON APPLICATIONS
SEMI M47 : 2007 SPECIFICATION FOR SILICON-ON-INSULATOR (SOI) WAFERS FOR CMOS LSI APPLICATIONS
SEMI M9 : 2016 SPECIFICATION FOR POLISHED MONOCRYSTALLINE GALLIUM ARSENIDE WAFERS
SEMI M79 : 2018 SPECIFICATION FOR ROUND 100 MM POLISHED MONOCRYSTALLINE GERMANIUM WAFERS FOR SOLAR CELL APPLICATIONS
SEMI 3D2 : 2016 SPECIFICATION FOR GLASS CARRIER WAFERS FOR 3DS-IC APPLICATIONS
SEMI M55 : 2017 SPECIFICATION FOR POLISHED MONOCRYSTALLINE SILICON CARBIDE WAFERS
SEMI M65 : 2016 SPECIFICATION FOR SAPPHIRE SUBSTRATES TO USE FOR COMPOUND SEMICONDUCTOR EPITAXIAL WAFERS
SEMI HB1 : 2016 SPECIFICATION FOR SAPPHIRE WAFERS INTENDED FOR USE FOR MANUFACTURING HIGH BRIGHTNESS-LIGHT EMITTING DIODE DEVICES

SEMI M9 : 2016 SPECIFICATION FOR POLISHED MONOCRYSTALLINE GALLIUM ARSENIDE WAFERS

View more information
€139.95
Excluding VAT
EUR
CAD
CHF
CNY
DKK
EUR
GBP
HKD
IDR
INR
JPY
KRW
MXN
NOK
NZD
SEK
SGD
USD
ZAR
Hardcopy - English
01
02
03
04
05
06
07
08
09
10
11
12
13
14
15
16
17
18
19
20

Access your standards online with a subscription

Features

  • Simple online access to standards, technical information and regulations.

  • Critical updates of standards and customisable alerts and notifications.

  • Multi-user online standards collection: secure, flexible and cost effective.

Get in touch with us