SEMI HB6 : 2016
Current
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The latest, up-to-date edition.
TEST METHOD FOR MEASUREMENT OF THICKNESS AND SHAPE OF CRYSTALLINE SAPPHIRE WAFERS BY USING OPTICAL PROBES
Published date
06-07-2015
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Specifies standardized test methods for measuring selected characteristics of CSW, geometry and surface deviations.
| DevelopmentNote |
Not available for sale from ILI, customer to contact SEMI. (06/2015)
|
| DocumentType |
Standard
|
| PublisherName |
Semiconductor Equipment & Materials Institute
|
| Status |
Current
|
| SEMI M20 : 2015 | PRACTICE FOR ESTABLISHING A WAFER COORDINATE SYSTEM |
| SEMI E89 : 2007(R2013) | GUIDE FOR MEASUREMENT SYSTEM ANALYSIS (MSA) |
| SEMI MF1569 : 2007 | GUIDE FOR GENERATION OF CONSENSUS REFERENCE MATERIALS FOR SEMICONDUCTOR TECHNOLOGY |
| SEMI HB1 : 2016 | SPECIFICATION FOR SAPPHIRE WAFERS INTENDED FOR USE FOR MANUFACTURING HIGH BRIGHTNESS-LIGHT EMITTING DIODE DEVICES |
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