SEMI M16 : 2010(R2015)
Superseded
Superseded
A superseded Standard is one, which is fully replaced by another Standard, which is a new edition of the same Standard.
View Superseded by
SPECIFICATION FOR POLYCRYSTALLINE SILICON
Superseded date
06-12-2021
Superseded by
Published date
12-01-2013
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Specifies requirements for polycrystalline silicon (poly) used to produce single crystal silicon by either the modified Czochralski (Cz) or float zone (FZ) crystal growth technique for applications in the semiconductor device industry.
| DevelopmentNote |
Not available for sale from ILI, customer to contact SEMI. (08/2005)
|
| DocumentType |
Standard
|
| PublisherName |
Semiconductor Equipment & Materials Institute
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| Status |
Superseded
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| SupersededBy |
| SEMI M1 : 2017 | SPECIFICATION FOR POLISHED SINGLE CRYSTAL SILICON WAFERS |
| SEMI MF1724 : 2004 | TEST METHOD FOR MEASURING SURFACE METAL CONTAMINATION OF POLYCRYSTALLINE SILICON BY ACID EXTRACTION-ATOMIC ABSORPTION SPECTROSCOPY |
| SEMI M18 : 2012 | GUIDE FOR DEVELOPING SPECIFICATION FORMS FOR ORDER ENTRY OF SILICON WAFERS |
| SEMI MF1708 : 2004 | PRACTICE FOR EVALUATION OF GRANULAR POLYSILICON BY MELTER-ZONER SPECTROSCOPIES |
| SEMI M59 : 2014 | TERMINOLOGY FOR SILICON TECHNOLOGY |
| SEMI MF1723 : 2004 | PRACTICE FOR EVALUATION OF POLYCRYSTALLINE SILICON RODS BY FLOAT-ZONE CRYSTAL GROWTH AND SPECTROSCOPY |
| SEMI MF1724 : 2004 | TEST METHOD FOR MEASURING SURFACE METAL CONTAMINATION OF POLYCRYSTALLINE SILICON BY ACID EXTRACTION-ATOMIC ABSORPTION SPECTROSCOPY |
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