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SEMI M16 : 2010(R2015)

Superseded

Superseded

A superseded Standard is one, which is fully replaced by another Standard, which is a new edition of the same Standard.

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superseded

A superseded Standard is one, which is fully replaced by another Standard, which is a new edition of the same Standard.

SPECIFICATION FOR POLYCRYSTALLINE SILICON

Superseded date

06-12-2021

Published date

12-01-2013

Specifies requirements for polycrystalline silicon (poly) used to produce single crystal silicon by either the modified Czochralski (Cz) or float zone (FZ) crystal growth technique for applications in the semiconductor device industry.

DevelopmentNote
Not available for sale from ILI, customer to contact SEMI. (08/2005)
DocumentType
Standard
PublisherName
Semiconductor Equipment & Materials Institute
Status
Superseded
SupersededBy

SEMI M1 : 2017 SPECIFICATION FOR POLISHED SINGLE CRYSTAL SILICON WAFERS
SEMI MF1724 : 2004 TEST METHOD FOR MEASURING SURFACE METAL CONTAMINATION OF POLYCRYSTALLINE SILICON BY ACID EXTRACTION-ATOMIC ABSORPTION SPECTROSCOPY
SEMI M18 : 2012 GUIDE FOR DEVELOPING SPECIFICATION FORMS FOR ORDER ENTRY OF SILICON WAFERS

SEMI MF1708 : 2004 PRACTICE FOR EVALUATION OF GRANULAR POLYSILICON BY MELTER-ZONER SPECTROSCOPIES
SEMI M59 : 2014 TERMINOLOGY FOR SILICON TECHNOLOGY
SEMI MF1723 : 2004 PRACTICE FOR EVALUATION OF POLYCRYSTALLINE SILICON RODS BY FLOAT-ZONE CRYSTAL GROWTH AND SPECTROSCOPY
SEMI MF1724 : 2004 TEST METHOD FOR MEASURING SURFACE METAL CONTAMINATION OF POLYCRYSTALLINE SILICON BY ACID EXTRACTION-ATOMIC ABSORPTION SPECTROSCOPY

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