SEMI M17 : 2010(R2015)
Superseded
A superseded Standard is one, which is fully replaced by another Standard, which is a new edition of the same Standard.
View Superseded by
GUIDE FOR A UNIVERSAL WAFER GRID
09-12-2021
12-01-2013
Specifies a grid pattern that is useful for quantifying surface defects on a nominally circular semiconductor wafer. The grid is defined such that it contains 1000 elements of approximately equal area. Also provides a design for and guidance for use of a wafer grid that facilitates the determination of the fraction of the wafer surface area covered by observed defects.
| DevelopmentNote |
Not available for sale from ILI, customer to contact SEMI. (05/2001)
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| DocumentType |
Standard
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| PublisherName |
Semiconductor Equipment & Materials Institute
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| Status |
Superseded
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| SupersededBy |
| SEMI M21 : 2018 | GUIDE FOR ASSIGNING ADDRESSES TO RECTANGULAR ELEMENTS IN A CARTESIAN ARRAY |
| SEMI MF1049:2008(R2013) | PRACTICE FOR SHALLOW ETCH PIT DETECTION ON SILICON WAFERS |
| SEMI M62 : 2017 | SPECIFICATIONS FOR SILICON EPITAXIAL WAFERS |
| SEMI M20 : 2015 | PRACTICE FOR ESTABLISHING A WAFER COORDINATE SYSTEM |
| SEMI M2 : 2003 | SPECIFICATION FOR SILICON EPITAXIAL WAFERS FOR DISCRETE DEVICE APPLICATIONS |
| SEMI T13 : 2004(R2010) | SPECIFICATION FOR DEVICE TRACKING: CONCEPTS, BEHAVIOR AND SERVICES |
| SEMI MF1726 : 2010(R2015) | PRACTICE FOR ANALYSIS OF CRYSTALLOGRAPHIC PERFECTION OF SILICON WAFERS |
| SEMI M59 : 2014 | TERMINOLOGY FOR SILICON TECHNOLOGY |
| SEMI MF1725 : 2010(R2015) | PRACTICE FOR ANALYSIS OF CRYSTALLOGRAPHIC PERFECTION OF SILICON INGOTS |
| SEMI MF154 : 2005(R2016) | GUIDE FOR IDENTIFICATION OF STRUCTURES AND CONTAMINANTS SEEN ON SPECULAR SILICON SURFACES |
| SEMI M62 : 2017 | SPECIFICATIONS FOR SILICON EPITAXIAL WAFERS |
| SEMI MF1809 : 2010(R2015) | GUIDE FOR SELECTION AND USE OF ETCHING SOLUTIONS TO DELINEATE STRUCTURAL DEFECTS IN SILICON |
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