SEMI M4 : NOV 2003
Withdrawn
A Withdrawn Standard is one, which is removed from sale, and its unique number can no longer be used. The Standard can be withdrawn and not replaced, or it can be withdrawn and replaced by a Standard with a different number.
SPECIFICATIONS FOR SOS EPITAXIAL WAFERS
01-03-2007
12-01-2013
Describes requirements for monocrystalline silicon epitaxial layers on sapphire substrates, used for semiconductor device manufacture. The combination of a silicon epitaxial layer on a sapphire substrate is known as a silicon on sapphire (SOS) epitaxial wafer.
| DevelopmentNote |
Not available for sale from ILI, customer to contact SEMI. (05/2001)
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| DocumentType |
Standard
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| PublisherName |
Semiconductor Equipment & Materials Institute
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| Status |
Withdrawn
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| SEMI MF81 : 2005(R2016) | TEST METHOD FOR MEASURING RADIAL RESISTIVITY VARIATION ON SILICON WAFERS |
| SEMI MF95 : 2007(R2018) | TEST METHOD FOR THICKNESS OF LIGHTLY DOPED SILICON EPITAXIAL LAYERS ON HEAVILY DOPED SILICON SUBSTRATES USING AN INFRARED DISPERSIVE SPECTROPHOTOMETER |
| SEMI MF374 :2012(R2018) | TEST METHOD FOR SHEET RESISTANCE OF SILICON EPITAXIAL, DIFFUSED, POLYSILICON, AND ION-IMPLANTED LAYERS USING AN IN-LINE FOUR-POINT PROBE WITH THE SINGLE-CONFIGURATION PROCEDURE |
| SEMI MF110 : 2007(R2018) | TEST METHOD FOR THICKNESS OF EPITAXIAL OR DIFFUSED LAYERS IN SILICON BY THE ANGLE LAPPING AND STAINING TECHNIQUE |
| SEMI MF673 : 2017 | TEST METHOD FOR MEASURING RESISTIVITY OF SEMICONDUCTOR WAFERS OR SHEET RESISTANCE OF SEMICONDUCTOR FILMS WITH A NONCONTACT EDDY-CURRENT GAUGE |
| SEMI MF154 : 2005(R2016) | GUIDE FOR IDENTIFICATION OF STRUCTURES AND CONTAMINANTS SEEN ON SPECULAR SILICON SURFACES |
| SEMI M3 : 2004 | SPECIFICATIONS FOR POLISHED MONOCRYSTALLINE SAPPHIRE SUBSTRATES |
| SEMI MF523 : 2007(R2018) | PRACTICE FOR UNAIDED VISUAL INSPECTION OF POLISHED SILICON WAFER SURFACES |
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