SEMI M58 : 2009(R2014)
Superseded
A superseded Standard is one, which is fully replaced by another Standard, which is a new edition of the same Standard.
View Superseded by
TEST METHOD FOR EVALUATING DMA BASED PARTICLE DEPOSITION SYSTEMS AND PROCESSES
05-10-2020
12-01-2013
Specifies determination of the deposition peak diameter and the associated expanded relative combined peak diameter uncertainty produced by a particle deposition system and its associated deposition procedures for comparison to the 3% requirement of SEMI M52.
| DevelopmentNote |
Not available for sale from ILI, customer to contact SEMI. (02/2005)
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| DocumentType |
Standard
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| PublisherName |
Semiconductor Equipment & Materials Institute
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| Status |
Superseded
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| SupersededBy |
| SEMI M53 : 2018 | PRACTICE FOR CALIBRATING SCANNING SURFACE INSPECTION SYSTEMS USING CERTIFIED DEPOSITIONS OF MONODISPERE REFERENCE SPHERES ON UNPATTERNED SEMICONDUCTOR WAFER SURFACES |
| SEMI M1 : 2017 | SPECIFICATION FOR POLISHED SINGLE CRYSTAL SILICON WAFERS |
| SEMI M52 : 2014 | GUIDE FOR SPECIFYING SCANNING SURFACE INSPECTION SYSTEMS FOR SILICON WAFERS FOR THE 130 NM TO 11 NM TECHNOLOGY GENERATIONS |
| SEMI PV22 : 2017 | SPECIFICATION FOR SILICON WAFERS FOR USE IN PHOTOVOLTAIC SOLAR CELLS |
| SEMI M57 : 2016 | SPECIFICATION FOR SILICON ANNEALED WAFERS |
| SEMI M59 : 2014 | TERMINOLOGY FOR SILICON TECHNOLOGY |
| SEMI ME1392 : 2016 | GUIDE FOR ANGLE RESOLVED OPTICAL SCATTER MEASUREMENTS ON SPECULAR OR DIFFUSE SURFACES |
| SEMI MF1811 : JAN 2016 | GUIDE FOR ESTIMATING THE POWER SPECTRAL DENSITY FUNCTION AND RELATED FINISH PARAMETERS FROM SURFACE PROFILE DATA |
| SEMI M50 : 2016 | TEST METHOD FOR DETERMINING CAPTURE RATE AND FALSE COUNT RATE FOR SURFACE SCANNING INSPECTION SYSTEMS BY THE OVERLAY METHOD |
| SEMI M52 : 2014 | GUIDE FOR SPECIFYING SCANNING SURFACE INSPECTION SYSTEMS FOR SILICON WAFERS FOR THE 130 NM TO 11 NM TECHNOLOGY GENERATIONS |
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