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SEMI M86 : 2015

Superseded

Superseded

A superseded Standard is one, which is fully replaced by another Standard, which is a new edition of the same Standard.

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SPECIFICATION FOR POLISHED MONOCRYSTALLINE C-PLANE GALLIUM NITRIDE WAFERS

Superseded date

19-10-2022

Superseded by

SEMI M86:2022

Published date

05-10-2015

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Includes substrate requirements for monocrystalline high-purity c-plane (0001) gallium nitride wafers used in semiconductor electronic and optical device manufacturing.

DevelopmentNote
Not available for sale from ILI, customer to contact SEMI. (09/2015)
DocumentType
Standard
PublisherName
Semiconductor Equipment & Materials Institute
Status
Superseded
SupersededBy

SEMI MF533 : 2010(R2016) TEST METHODS FOR THICKNESS AND THICKNESS VARIATION OF SILICON WAFERS
SEMI M59 : 2014 TERMINOLOGY FOR SILICON TECHNOLOGY
SEMI MF1530 : 2007(R2018) TEST METHOD FOR MEASURING FLATNESS, THICKNESS, AND TOTAL THICKNESS VARIATION ON SILICON WAFERS BY AUTOMATED NON-CONTACT SCANNING
SEMI T5 : 2014 SPECIFICATION FOR ALPHANUMERIC MARKING OF ROUND COMPOUND SEMICONDUCTOR WAFERS
SEMI MF673 : 2017 TEST METHOD FOR MEASURING RESISTIVITY OF SEMICONDUCTOR WAFERS OR SHEET RESISTANCE OF SEMICONDUCTOR FILMS WITH A NONCONTACT EDDY-CURRENT GAUGE
SEMI MF657 : 2007E TEST METHOD FOR MEASURING WARP AND TOTAL THICKNESS VARIATION ON SILICON WAFERS BY NONCONTRAST SCANNING
SEMI MF154 : 2005(R2016) GUIDE FOR IDENTIFICATION OF STRUCTURES AND CONTAMINANTS SEEN ON SPECULAR SILICON SURFACES
SEMI MF43 : 2016 TEST METHOD FOR RESISTIVITY OF SEMICONDUCTOR MATERIALS
SEMI MF523 : 2007(R2018) PRACTICE FOR UNAIDED VISUAL INSPECTION OF POLISHED SILICON WAFER SURFACES

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